Abstract: A method of fabricating a castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device is formed on a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed by ion implantation into the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascode structure. A plurality of thin semiconductor channel elements are formed by etching a plurality of spaced gate slots to a first predetermined depth into the substrate. The formation of first, second, and additional gate structures are described in two possible embodiments which facilitate the formation of self-aligned source and drain regions.

Abstract: A method of fabricating a castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device is formed on a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed by ion implantation into the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascode structure. A plurality of thin semiconductor channel elements are formed by etching a plurality of spaced gate slots to a first predetermined depth into the substrate. The formation of first, second, and additional gate structures are described in two possible embodiments which facilitate the formation of self-aligned source and drain regions.

Abstract: A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed in the semiconductor substrate region, with adjoined primary and secondary channel-forming regions also disposed therein between the source and drain regions, thereby forming an integrated cascade structure. Trench isolation insulator islands, having upper and lower surfaces, surround the source and drain regions as well as the channel-forming regions. Both the primary and secondary channel-forming regions include pluralities of thin, spaced, vertically-orientated semiconductor channel elements that span longitudinally along the device between the source and drain regions.

Abstract: The present invention relates to methods for the detection of microorganisms. In one embodiment, the present invention provides methods for detecting live microorganisms in a culture by capturing and culting the microorganisms on para-tropic-coated paramagnetic beads. This technique is useful for any application in which it is necessary to monitor the biological contamination level, for example drinking water, recreational waters, food processing waters and medical laboratories. In one embodiment, the method for determining the concentration of viable microorganisms in a sample according to the invention further comprises an inducer reagent, wherein the inducer reagent includes an inducer compound that induces the activity of an enzyme unique to the microorganism of interest.

Abstract: A process is employed to formed a reinforced polymeric material and articles having the reinforced polymeric material. The process typically forms a masterbatch of polymeric material and reinforcement material and combines the masterbatch with secondary materials that include a second polymeric material. The process is particularly applicable to styrenic polymers.