Abstract: A method for correcting color characteristics of a flat panel display comprises the steps of using a signal generating device to generate an input signal to the display and a color measurement instrument to measure color displayed by the display to obtain an output value; obtaining corrected color characteristic values necessary for the display to display a target output value Txyz through the relation of an inverse function RGB=f?1(XYZ) between the input signal RGB and output value XYZ, and storing the corrected color characteristic values and an identification code of the display into a storage medium. The corrected color characteristic values are downloaded to a hard disk of a computer from the storage medium according to the identification code; and the computer uses a driver of the display to activate the flat panel display to display a corrected color according to the corrected color characteristic values.

Abstract: A method for correcting color characteristics of a flat panel display comprises the steps of using a signal generating device to generate an input signal to the display and a color measurement instrument to measure color displayed by the display to obtain an output value; obtaining corrected color characteristic values necessary for the display to display a target output value Txyz through the relation of an inverse function RGB=f?1(XYZ) between the input signal RGB and output value XYZ, and storing the corrected color characteristic values and an identification code of the display into a storage medium. The corrected color characteristic values are downloaded to a hard disk of a computer from the storage medium according to the identification code; and the computer uses a driver of the display to activate the flat panel display to display a corrected color according to the corrected color characteristic values.

Abstract: A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.

Abstract: A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

Abstract: A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

Abstract: A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.

Abstract: An image processing method for the adjustment of photographic contrast which utilizes a user interface to display digital image data captured by an image processing apparatus, and allows the user to adjust the set value of the image data and then to store this adjusted value in a parameter setting memory. This enables the apparatus to calculate the contrast characteristics parameter according to the adjusted value, store it in a control parameter memory and to drive a signal converter unit to convert and encode the analog signals transmitted from a image sensing device into digital image data according to the contrast characteristics parameter value stored in the control parameter memory. The apparatus then stores the digital image data thus obtained in an output image memory and transmits the digital image data from the output image memory to the display of the user interface, enabling the contrast value of the imaging system being repeatedly adjusted to obtain the desired contrast in the image.

Abstract: A front opening unified pod (FOUP) with a dust-proof device that is set up beside a station for processing 12-inch wafers. The FOUP door opener opens up to allow wafers going to or from the FOUP while preventing external dust particles from diffusing into the station. The FOUP door opener includes an inner door and an outer door. The dust-proofing device is set up close to the FOUP door opener next to a nitrogen load-lock area inside the station. The dust-proofing device has a gas pump for pumping gases, a gas filter connected to the gas outlet port of the gas pump for removing dust particles, a gas outflow unit connected to the gas outlet port of the gas filter for blowing a layer of laminar gas and a gas inflow unit connected to the gas inlet port of the gas pump so that gas blown out from the gas outflow unit is returned to the gas pump via the gas inflow unit. The FOUP door opener prevents dust particles from contaminating the loading area of the furnace while using very little nitrogen.