Abstract: An RF sensor is provided herein. The sensor comprises a clamping mechanism (101), a metal collar (113) disposed about the clamping mechanism, an RF current transducer (203) having a transducer coil (213) disposed on a circuit board (126), the RF current transducer being disposed adjacent to the collar, and a metal housing (215) for the transducer coil, the housing being mounted on the circuit board and having first and second open ends.

Abstract: A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly (101) comprises a first wedge-shaped element (103), and a second wedge-shaped element (105) which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar (113) within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (111), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

Abstract: A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

Abstract: A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.

Abstract: A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.