Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.

Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract: An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.

Abstract: A method of fabricating free-standing (Al, In, Ga)N substrates, by in situ separation of thick epitaxially grown nitride films from their foreign substrates. A suitable substrate for (Al, In, Ga)N film growth is selected, and foreign ions are implanted in the substrate to form a comparatively sharp concentration profile. An (Al, In Ga)N film is deposited on the substrate, and the deposited film is cooled to introduce thermal expansion mismatch-related strain, so that the film spontaneously separates from the substrate.

Abstract: A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species. The patterned layer comprises a mask (made of insulating, semiconducting or metallic material) and material filling holes in the mask. The patterned layer, due to a large index difference with the active layer and/or variations of a refractive index between the mask and materials filling holes in the mask, acts as an optical confinement layer, a mirror, a diffraction grating, a wavelength selective element, a beam shaping element or a beam directing element.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

Abstract: Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE).

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A hollow grain propellant for use in a lightweight training round. The hollow grain propellant incorporates multi-perforation propellant grain geometry. The hollow grain propellant is configured as a propellant grain having a center hole surrounded by uniform perforations. The center hole is larger than any one of the uniform perforations. The placement of the uniform perforations forms webs of equal length. The hollow grain propellant may include seven or more perforations. The perforations are arranged in a single ring around the center hole. The size of the center hole may be controlled to produce a wide range of bulk densities. The number of perforations may be dependant on the size of the center hole. The number of perforations may be controlled to vary with the size of the center hole to provide for a desired bulk density. The large center hole improves flame permeability through a propellant bed by increasing the porosity of the propellent bed and increasing grain diameter.

Abstract: An improved electrical cable reel is provided which quickly and easily loads and unloads a coil of wire. The reel has an outer circular plate coupled to a vertical post for rotation about a horizontal axis. Four spaced, radially movable fingers adjacent the plate simultaneously retract inwardly as the plate is turned to a coil loading position. Once the wire coil is in place, means are provided for selectively releasing the fingers for radially outward movement under the influence of a set of springs. Consequently, the fingers rapidly engage the coil at its inner core. Subsequently, a clutch means may be operated to render the reel rotatable in either direction. The maintenance-free operating structure is safely and conveniently placed out of reach. Advantageously, the reel is mounted on a four wheeled electrical cart containing a measuring device and a wire cutter, such that various coils may be quickly changed for use on the cart.