Abstract: A system and method for surface temperature assessment of ultrawide bandgap semiconductors via thermoreflectance thermal imaging (TTI) are provided. In implementations, a method includes: determining an optimal sub-bandgap measurement wavelength for the ultrawide bandgap material based on relative changes in reflectivity of the ultrawide bandgap material as a function of wavelength; determining a thermoreflectance coefficient (CTR) of the ultrawide bandgap material based on a change in reflectivity of the ultrawide bandgap material, illuminated at the optimal sub-bandgap measurement wavelength, as a function of temperature; and determining temperature rise characteristics of the ultrawide bandgap material based on: a change in reflectivity of the ultrawide bandgap material, illuminated at the optimal sub-bandgap measurement wavelength, as a function of a power level applied to the semiconductor device; and the thermoreflectance coefficient (CTR) of the ultrawide bandgap material.

Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.

Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.