Abstract: Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (11 20) a-plane GaN thin films.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (11 02) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract: Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (11 20) a-plane GaN thin films.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract: A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Abstract: Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

Abstract: Non-polar (11{overscore (2)}0) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1{overscore (1)}02) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (11{overscore (2)}0) a-plane GaN thin films.