Patents by Inventor James Stuart Dunn
James Stuart Dunn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140151851Abstract: A chip capacitor and interconnecting wiring is described incorporating a metal insulator metal (MIM) capacitor, tapered vias and vias coupled to one or both of the top and bottom electrodes of the capacitor in an integrated circuit. A design structure tangibly embodied in a machine readable medium is described incorporating computer readable code defining a MIM capacitor, tapered vias, vias and wiring levels in an integrated circuit.Type: ApplicationFiled: February 10, 2014Publication date: June 5, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: JAMES STUART DUNN, ZHONG-XIANG HE, ANTHONY KENDALL STAMPER
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Patent number: 8649153Abstract: A chip capacitor and interconnecting wiring is described incorporating a metal insulator metal (MIM) capacitor, tapered vias and vias coupled to one or both of the top and bottom electrodes of the capacitor in an integrated circuit. A design structure tangibly embodied in a machine readable medium is described incorporating computer readable code defining a MIM capacitor, tapered vias, vias and wiring levels in an integrated circuit.Type: GrantFiled: April 28, 2011Date of Patent: February 11, 2014Assignee: International Business Machines CorporationInventors: James Stuart Dunn, Zhong-Xiang He, Anthony Kendall Stamper
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Patent number: 8375539Abstract: A method of manufacturing a low capacitance density, high voltage MIM capacitor and the high density MIM capacitor. The method includes depositing a plurality of plates and a plurality of dielectric layers interleaved with one another. The method further includes etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate. The protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor.Type: GrantFiled: August 5, 2009Date of Patent: February 19, 2013Assignee: International Business Machines CorporationInventors: James Stuart Dunn, Zhong-Xiang He, Anthony K. Stamper
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Patent number: 7713829Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: GrantFiled: November 22, 2006Date of Patent: May 11, 2010Assignee: International Business Machines CorporationInventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Publication number: 20080124881Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: ApplicationFiled: November 22, 2006Publication date: May 29, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jack Ooh Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 7173274Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: GrantFiled: September 29, 2004Date of Patent: February 6, 2007Assignee: International Business Machines CorporationInventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 6833299Abstract: A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.Type: GrantFiled: November 12, 2002Date of Patent: December 21, 2004Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, James Stuart Dunn, Stephen Arthur St. Onge
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Patent number: 6815802Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: GrantFiled: April 15, 2002Date of Patent: November 9, 2004Assignee: International Business Machines CorporationInventors: Jack Oon Chu, Douglass Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 6812545Abstract: An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.Type: GrantFiled: April 29, 2003Date of Patent: November 2, 2004Assignee: International Business Machines CorporationInventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St. Onge
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Publication number: 20030201517Abstract: An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to..said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.Type: ApplicationFiled: April 29, 2003Publication date: October 30, 2003Inventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St,. Onge
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Patent number: 6617220Abstract: An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.Type: GrantFiled: March 16, 2001Date of Patent: September 9, 2003Assignee: International Business Machines CorporationInventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St. Onge
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Patent number: 6597050Abstract: A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.Type: GrantFiled: May 19, 2000Date of Patent: July 22, 2003Assignee: International Business Machines CorporationInventors: James Stuart Dunn, Peter Brian Gray, Kenneth Knetch Kieft, III, Nicholas Theodore Schmidt, Stephen St. onge
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Publication number: 20030092239Abstract: A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.Type: ApplicationFiled: November 12, 2002Publication date: May 15, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Douglas D. Coolbaugh, James Stuart Dunn, Stephen Arthur St. Onge
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Patent number: 6507063Abstract: A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.Type: GrantFiled: April 17, 2000Date of Patent: January 14, 2003Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, James Stuart Dunn, Stephen Arthur St. Onge
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Publication number: 20020132438Abstract: An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface. wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.Type: ApplicationFiled: March 16, 2001Publication date: September 19, 2002Inventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johson, Louis Dewolf Lanzerotti, Stephen Arthur St. Onge
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Publication number: 20020121676Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: ApplicationFiled: April 15, 2002Publication date: September 5, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 6440811Abstract: A method for fabricating a poly-poly capacitor integrated with a BiCMOS process which includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor; and forming an upper SiGe plate electrode during growth of a SiGe base region of a heterojunction bipolar transistor.Type: GrantFiled: December 21, 2000Date of Patent: August 27, 2002Assignee: International Business Machines CorporationInventors: Douglas Duane Coolbaugh, James Stuart Dunn, Stephen Arthur St. Onge
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Publication number: 20020100917Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: ApplicationFiled: January 30, 2001Publication date: August 1, 2002Applicant: International Business Machines CorporationInventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 6426265Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.Type: GrantFiled: January 30, 2001Date of Patent: July 30, 2002Assignee: International Business Machines CorporationInventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
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Patent number: 6420747Abstract: Reliable metal oxide semiconductor (MOS) devices which exhibit little or no oxide breakdown at the Rx edge during device biasing are provided. The improved reliability is obtained by forming a contact to the polysilicon top conductor over a substantially thicker portion of the dielectric region. A method of fabricating the improved CMOS devices is also disclosed herein.Type: GrantFiled: February 10, 1999Date of Patent: July 16, 2002Assignee: International Business Machines CorporationInventors: Douglas Duane Coolbaugh, James Stuart Dunn, Peter John Geiss, Douglas Brian Hershberger, Stephen Arthur St. Onge