Abstract: An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: A plurality of endpoints in a wet etching process of a substrate are determined. A plurality of benchmark end points during a wet etching process of a first substrate are determined, using first light information represented by a HSV color model for sample locations of the first substrate. Etch parameters are generated for a wet etching process for a second substrate. The generated etch parameters are used with second light information represented by at least one value of the Hue, Saturation, Value color model associated with a plurality of sample locations of the second substrate to reach respective end points during the wet etching process of a second substrate.

Abstract: A two-level tape frame rinse assembly is configured for grasping the substrate so as to create a gap between the substrate and a backside support plate that allows the backside of the wafer to be rinsed and spun dry after rinsing.

Abstract: An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.

Abstract: A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.

Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.

Abstract: A two-level tape frame rinse assembly is configured for grasping the substrate so as to create a gap between the substrate and a backside support plate that allows the backside of the wafer to be rinsed and spun dry after rinsing.

Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.

Abstract: The invention provides a Couch Shelf, a space saving, single shelf accessory unit designed primarily to be placed behind the back of a couch. The Couch Shelf works equally well behind or next to a bed. The shelving component of the Couch Shelf is manufactured in wood, plastic or glass material. The Couch Shelf is manufactured in three installment type embodiments. A first embodiment is free standing, a second embodiment is fixed and wall mounted, and a third embodiment is a hinged and wall mounted or mounted to the back of the couch.