Abstract: A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

Abstract: Accomodations for a magnetically levitated rotating system in an RTP chamber are provided. The system includes a magnetically permeable rotor; a cylindrical thin wall concentric with and surrounding the rotor; and a magnetic stator assembly adjacent the cylindrical thin wall. The radial distance between the rotor and the magnetic stator assembly is small enough that a magnetic field created by the stator assembly magnetically levitates the rotor but is great enough that the rotor does not physically contact the thin wall upon thermal expansion. The system is such that the relative positions of a plurality of sensors which determine the position of a rotating frame is maintained upon dismantling. Thermal isolation of the area including the rotor is accomplished from the reactive gases in a processing area of the RTP chamber. The rotor may be cooled by a number of cooling chambers formed within the chamber.

Abstract: A chemical mechanical polishing apparatus has a platen, a polishing sheet extending between a first roller and a second roller, and a support sheet extending between a third roller and a fourth roller. A portion of the polishing sheet extends over a surface of the platen to polish a substrate, and a portion of the support sheet extends between the platen and the polishing sheet. The polishing sheet may be a continuous belt or a reel-to-reel tape, and the support sheet may be a continuous belt or reel-to-reel tape.

Abstract: An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.

Abstract: A semiconductor wafer fabrication apparatus includes a carrier head for holding a wafer and distributing a downward pressure across a back surface of the wafer. The apparatus also includes a wafer processing station disposed near the carrier head. The station includes a grinding wheel and a flat fluid bearing. The fluid bearing provides an upward pressure against a front surface of the wafer to substantially flatten the front surface of the wafer and conform it to the flatness of the bearing surface. The face of the wafer can move with very little friction across the bearing surface. The grinding wheel can be raised into contact with the front surface of the wafer and rotated to grind the front surface while the fluid bearing provides the upward pressure and the carrier head distributes the downward pressure. The technique can be used to planarize a wafer having one or more previously-formed layers despite variations in thickness of the wafer or warpage of the wafer.

Abstract: A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.

Abstract: A showerhead for introducing gas from one or more external supplies into a substrate processing chamber, the showerhead including a faceplate including a plurality of gas injection ports through which gas is injected into the chamber, wherein the plurality of gas injection ports includes a first subset of gas injection ports and a second subset of gas injection ports; a first gas distribution system which during use delivers a first gas to the first subset of injection ports for injection into the chamber; and a second gas distribution system which during use delivers a second gas to the second subset of injection ports for injection into the chamber.

Abstract: In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.

Abstract: An apparatus for purging the backside of a substrate in a process chamber includes a purge gas injector. The injector includes a substantially annular-shaped opening providing a slit that is structured and arranged to direct a flow of purge gas about radially outward therefrom in a direction approximately parallel to a plane defined by the substrate, wherein the substrate is supported in the process chamber above the purge gas injector. When the substrate is rotated at a sufficient speed, the purge gas flowing from the injector is impelled to flow spirally outward along the backside of the substrate.

Abstract: A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.

Abstract: A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.

Abstract: A substrate support mechanism including a housing made of a magnetically permeable material; a pin located substantially within the housing and having an upper end extending up into a passage which extends up through the bottom of the chamber and into the cavity which contains a substrate during processing; a first magnet assembly on the inside of the housing and mounted on the pin; a carriage structure located outside of the housing; and a second magnet assembly mounted on the carriage structure, wherein the first and second magnet assemblies are positioned relative to each other so that the second magnet assembly causes the pin and the first magnet assembly to magnetically levitate within the housing.

Abstract: An annular-shaped edge ring support for a semiconductor wafer has an innermost radial portion for supporting the semiconductor wafer and an outermost radial portion contiguous with the inner portion. The inner portion has a graded thermal mass that generally increases with increasing radius.

Abstract: A showerhead for use with a lamp head in a thermal processing chamber, the lamp head including a high intensity source which emits radiation that heats a substrate within the chamber, the showerhead including a top window on a side of the showerhead that is adjacent to the lamp head; a bottom window on a side of the showerhead that is adjacent to the substrate during processing; and a gas supply inlet through which a gas is introduced into a space between the top and bottom windows, wherein the top and bottom windows are transparent to the radiation from the source in the lamp head and wherein the bottom window includes a plurality of gas distribution holes through which gas is injected from the space between the top and bottom windows into the chamber.