Abstract: A loading station for a substrate processing system includes first and second vertically-stacked loading stations. The first loading station includes a first airlock volume and first and second valves arranged at respective ends of the first loading station. The first and second valves are configured to selectively provide access to the first airlock volume and include first and second actuators, respectively, configured to open and close the first and second valves, and the first and second actuators extend downward from the first loading station. The second loading station includes a second airlock volume and third and fourth valves arranged at respective ends of the second loading station. The third and fourth valves are configured to selectively provide access to the second airlock volume and include third and fourth actuators, respectively, configured to open and close the third and fourth valves.

Abstract: A loading station for a substrate processing system includes first and second vertically-stacked loading stations. The first loading station includes a first airlock volume and first and second valves arranged at respective ends of the first loading station. The first and second valves are configured to selectively provide access to the first airlock volume and include first and second actuators, respectively, configured to open and close the first and second valves, and the first and second actuators extend downward from the first loading station. The second loading station includes a second airlock volume and third and fourth valves arranged at respective ends of the second loading station. The third and fourth valves are configured to selectively provide access to the second airlock volume and include third and fourth actuators, respectively, configured to open and close the third and fourth valves.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: A coil has an integral fastener portion to facilitate fastening the coil to a shield wall to reduce generation of particulates.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.

Abstract: A target assembly for a physical vapor deposition system having a target material flux region which produces backscatter particles and a substrate support assembly is provided. In one embodiment, the target assembly comprises a central region and a flange radially extending from the central region. The flange is constructed of a first material and is adapted to support the target assembly within the physical vapor deposition system in a parallel spaced apart relation to the substrate support assembly. A flange cover member is disposed between the flange and the flux region. The flange cover member is constructed of a material having a greater adhesiveness to the backscatter particles than the first material and is permanently secured to the flange. A target member constructed of a sputterable material is disposed between the central region of the target assembly and the flux region of the physical vapor deposition system.

Abstract: An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

Abstract: A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

Abstract: Methods for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage in a deposition process. In at least one aspect, a target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil. At least a portion of the electrons provided by the plasma and ionized target material are deflected by a magnetic field established adjacent to the substrate. Under the influence of the attracted electrons, positively charged particles are induced to move in the direction of the electrons. The magnetic field may be provided by one or more magnets located internally or externally to the processing chamber and which can be rotated to ensure uniform deposition of the electrons and ions on the device features.

Abstract: An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

Abstract: A method and apparatus for pre-heating a coil used to generate a plasma field in a processing chamber in a semiconductor fabrication system. The coil is pre-heated in the chamber prior to sputter depositing material onto a substrate and workpiece. The coil is pre-heated to a predetermined temperature, which is preferably equal to or greater than the equilibrium temperature attained by the coil during sputter deposition processes. Pre-heating may be effected with a preheating current having a frequency lower than the minimum frequency required to ignite a plasma, or when the processing chamber contains an atmosphere which prevents formation of a plasma. The coil may pre-heated for a predetermined time period.

Abstract: Apparatus for supporting a wafer in a semiconductor wafer processing system. The apparatus contains a pedestal assembly, a ring assembly circumscribing the pedestal and an insulator between the pedestal assembly and ring assembly. The insulator electrically isolates the pedestal assembly from the ring assembly thereby preventing unwanted power coupling through the ring assembly.

Abstract: An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered.