Abstract: An apparatus which provides a self-reconfigurable analog resonant computer employing a fixed electronic circuit schematic which performs computing logic operations (for example OR, AND, NOR, and XOR Boolean logic) without physical re-wiring and whose components only include passive circuit elements such as resistors, capacitors, inductors, and memristor devices. The computational logic self-reconfiguration process in the circuit takes place as training input signals, which are input causing the impedance state of the memristor device to change. Once the training process is completed, the circuit is probed to determine whether the desired logic operation has been programmed.

Abstract: An apparatus which provides a self-reconfigurable analog resonant computer employing a fixed electronic circuit schematic which performs computing logic operations (for example OR, AND, NOR, and XOR Boolean logic) without physical re-wiring and whose components only include passive circuit elements such as resistors, capacitors, inductors, and memristor devices. The computational logic self-reconfiguration process in the circuit takes place as training input signals, which are input causing the impedance state of the memristor device to change. Once the training process is completed, the circuit is probed to determine whether the desired logic operation has been programmed.

Abstract: A method and apparatus for modeling the characteristics of memristor devices. The invention provides methods and an apparatus for accurately characterizing the linear and non-linear Lissajous current-voltage behavior of actual memristor devices and incorporating such behavior into the resultant model. The invention produces a model that is adaptable to large scale memristor device simulations.

Abstract: A method and apparatus for modeling the characteristics of memristor devices. The invention provides methods and an apparatus for accurately characterizing the linear and non-linear Lissajous current-voltage behavior of actual memristor devices and incorporating such behavior into the resultant model. The invention produces a model that is adaptable to large scale memristor device simulations.