Patents by Inventor James W. Cook, Jr.

James W. Cook, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10211294
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: February 19, 2019
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, Jr.
  • Publication number: 20190013196
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: July 10, 2017
    Publication date: January 10, 2019
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Patent number: 9704705
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: July 11, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, Jr.
  • Patent number: 9627473
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: April 18, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, Jr.
  • Publication number: 20170069720
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069713
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
  • Publication number: 20170069484
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069744
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Publication number: 20170069742
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, James W. Cook, JR.
  • Patent number: 7994540
    Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: August 9, 2011
    Assignee: International Rectifier Corporation
    Inventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
  • Publication number: 20100019850
    Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
    Type: Application
    Filed: July 24, 2009
    Publication date: January 28, 2010
    Applicant: Nitronex Corporation
    Inventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, JR., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan
  • Patent number: 7135720
    Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
    Type: Grant
    Filed: August 5, 2004
    Date of Patent: November 14, 2006
    Assignee: Nitronex Corporation
    Inventors: Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook, Jr., Allen W. Hanson, Jerry W. Johnson, Kevin J. Linthicum, Edwin L. Piner, Pradeep Rajagopal, John C. Roberts, Sameer Singhal, Robert J. Therrien, Andrei Vescan