Abstract: A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect transistor structure is at least partially transparent to radiation of at least part of the electro-magnetic spectrum. In some embodiments radiation sensitive material is deposited upon the gate portion of the sourceless field-effect transistor structure.

Abstract: A merged channel and bipolar device which exploits the distributed character of the device generates useful electronic characteristics by controlling the current and voltage inputs to the four or more terminals attached to the device, said electronic characteristics being useful for affecting the ac and dc current gain of the device, its transconductance, non-linearities, the electronic output characteristics as a function of input signals, electronic switching, gain control, output limiting, heterodyning, harmonic generation and voltage references.Other applications which employ non-linear behavior include distributed amplification of traveling waves, multiple methods for chemical sensing and other sensor applications.