Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Abstract: New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.

Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: New Te-salts are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.

Abstract: A photoresist composition comprises a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group; a second polymer comprising a first repeating unit comprising a hydroxy-aryl group, a second repeating unit comprising an acid-labile group, and a third repeating unit comprising a lactone group; a photoacid generator; and a solvent.

Abstract: A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Abstract: A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1): wherein R1 to R5 are as provided herein; R2 and R3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C1-20 alkyl, a monocyclic or polycyclic C3-20 cycloalkyl, a monocyclic or polycyclic C3-20 fluorocycloalkenyl, a monocyclic or polycyclic C3-20 heterocycloalkyl, a monocyclic or polycyclic C6-20 aryl, or a monocyclic or polycyclic C4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.

Abstract: A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

Abstract: A photoacid generator compound having formula (I): wherein, in formula (I), groups and variables are the same as described in the specification.

Abstract: A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

Abstract: A monomer having formula (I): wherein in formula (I), groups and variables are the same as described in the specification.

Abstract: Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Abstract: New Te-salt compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Abstract: New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.