Abstract: A protection device for metal insulator metal (MIM) capacitors are described. In an example, an electronic assembly includes a semiconductor substrate. A dielectric layer is on the semiconductor substrate. A conductive via is in an opening in the dielectric layer, the conductive via in direct contact with the semiconductor substrate. A metal-insulator-metal (MIM) capacitor structure is electrically coupled to the conductive via.

Abstract: A device structure includes transistors on a first level in a first region and a first plurality of capacitors on a second level, above the first level, where a first electrode of the individual ones of the first plurality of capacitors are coupled with a respective transistor. The device structure further includes a second plurality of capacitors on the second level in a second region adjacent the first region, where individual ones of the second plurality of capacitors include a second electrode, a third electrode and an insulator layer therebetween, where the second electrode of the individual ones of the plurality of capacitors are coupled with a first interconnect on a third level above the second level, and where the third electrode of the individual ones of the plurality of capacitors are coupled with a second interconnect.