Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.

Abstract: A process for forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum dioxydichloride (MoO2Cl2) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. Advantageously, the robust process does not require pre-treatment of the substrate with a nucleating agent. In certain embodiments, the process results in the bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD or ALD.