Abstract: The present disclosure relates to prosthesis systems having trays and liners having an asymmetrical locking mechanism to bias the strength of the liner to resist loading forces and associated methods. The tray has a lateral groove disposed in an inner surface of a lateral circumferential portion of the tray and a medial groove disposed in an inner surface of a medial circumferential portion of the tray. The liner has an upper segment and a lower segment. The liner has a locking portion for lockingly engaging the tray that includes the lower segment. The locking portion has a lateral toe positioned generally diametrically opposite a plurality of resiliently deformable medial fingers defined therein. The liner and the tray are engageable in a lateral-to-medial direction so that the plurality of medial fingers can resiliently deform to engage the medial groove subsequent to engagement of the lateral toe within the lateral groove.

Abstract: A polymer blend including 5 to 95 weight percent of a poly(ester-carbonate-carbonate) comprising 40 to 95 mole percent of ester units comprising low heat bisphenol groups and high heat bisphenol groups, wherein the ester units comprise 20 to 80 mole percent of the low heat bisphenol groups and 20 to 80 mole percent of the high heat bisphenol groups, based on the total moles of ester units in the poly(ester-carbonate-carbonate), and 5 to 60 mole percent of carbonate units comprising the low heat bisphenol groups and the high heat bisphenol groups, wherein the carbonate units comprise 20 to 80 mole percent of the low heat bisphenol groups and 20 to 80 mole percent of the high heat bisphenol groups, based on the total moles of carbonate units in the poly(ester-carbonate-carbonate); and 5 to 95 weight percent of a poly(etherimide), wherein the weight percent of each polymer is based on the total weight of the polymers in the blend, and a molded 0.

Abstract: A 3-D memory module comprising a plurality of packaged integrated memory circuits or devices is mounted to a substrate with integrated pins that are edge-connected on two surfaces where the top surface provides an edge connection from the integrated memory circuits to an orthogonally-mounted memory controller circuit through a wide-word interface. Each integrated memory device can be accessed independently wherein the memory controller is configured to reduce the wide-word interface to a serial interface which is brought to the opposite surface of the memory module for electrical coupling to an external system or printed circuit assembly.

Abstract: A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

Abstract: A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

Abstract: A method for electrically coupling an anti-tamper mesh to an electronic module or device using wire bonding equipment and a device made from the method. Stud bumps or free air ball bonds are electrically coupled to conductive mesh pads of an anti-tamper mesh. Respective module pads have a conductive epoxy disposed thereon for the receiving of the stud bumps or free air ball bonds, each of which are aligned and bonded together to electrically couple the anti-tamper mesh to predetermined module pads.

Abstract: A method for defining an electrically conductive metalized structure, which may comprise an electrode or trace, on the surface of a three-dimensional element. The three-dimensional element may comprise a glass microsphere or shell resonator. A laser direct write grayscale photolithographic process is used in conjunction with electrically conductive metal deposition processes to define one or more electrically conductive metal structures on the surfaces of the three dimensional element.

Abstract: A method for fabricating a stackable integrated circuit layer and a device made from the method are disclosed. A stud bump is defined on the contact pad of an integrated circuit die and the stud-bumped die encapsulated in a potting material to define a potted assembly. A predetermined portion of the potting material is removed whereby a portion of the stud bump is exposed. One or more electrically conductive traces are defined on the layer surface and in electrical connection with the stud bump to reroute the integrated circuit contacts to predetermined locations on the layer to provide a stackable neolayer.

Abstract: A method for fabricating an integrated circuit chip-scale package and a device made from the method. One or more IC chips are mounted on a carrier and a stud bump defined on an IC pad. The stud-bumped IC is encapsulated to define a potted assembly layer which is thinned to expose the stud bump. Conductive first traces are defined and coupled to the stud bump to reroute the IC pads. A dielectric layer is provided and vias defined there through to expose the first traces. Electrically conductive second traces are disposed on the dielectric layer surface that are coupled to the first traces to reroute the IC pads to define a chip scale package.

Abstract: A method for electrically coupling an anti-tamper mesh to an electronic module or device using wire bonding equipment and a device made from the method. Stud bumps or free air ball bonds are electrically coupled to conductive mesh pads of an anti-tamper mesh. Respective module pads have a conductive epoxy disposed thereon for the receiving of the stud bumps or free air ball bonds, each of which are aligned and bonded together to electrically couple the anti-tamper mesh to predetermined module pads.

Abstract: A method for defining an electrically conductive metalized structure, which may comprise an electrode or trace, on the surface of a three-dimensional element. The three-dimensional element may comprise a glass microsphere or shell resonator. A laser direct write grayscale photolithographic process is used in conjunction with electrically conductive metal deposition processes to define one or more electrically conductive metal structures on the surfaces of the three dimensional element.

Abstract: A method for fabricating a stackable integrated circuit layer and a device made from the method are disclosed. A stud bump is defined on the contact pad of an integrated circuit die and the stud-bumped die encapsulated in a potting material to define a potted assembly. A predetermined portion of the potting material is removed whereby a portion of the stud bump is exposed. One or more electrically conductive traces are defined on the layer surface and in electrical connection with the stud bump to reroute the integrated circuit contacts to predetermined locations on the layer to provide a stackable neolayer.

Abstract: A process and product made from the process is disclosed to minimize solder collapse during solder reflow. Predetermined bond pads on a layer or component have a solder paste such as Sn63 solder paste with a first lower reflow temperature applied and a spacer element such as an SAC solder ball or stud bump having a predetermined geometry with a second higher reflow temperature applied. The SAC solder balls or stud bumps act as spacing elements but do not interact with the solder paste such that the solder paste may be reflowed while precisely maintaining the space between the layers.

Abstract: A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

Abstract: A device and method using one or more electrically conductive nano-structures defined on one or more surfaces of a microelectronic circuit such as an integrated circuit die, microelectronic circuit package a stacked microelectronic circuit package, or on the surface of one or more layers in a stack of layers containing one or more ICs. The nano-structure is in connection with a monitoring circuit and acts as a “trip wire” to detect unauthorized tampering with the device or module. Such a monitoring circuit may include a power source such as an in-circuit or in-module battery and a “zeroization” circuit within the chip or package to erase the contents of a memory when the nano-structure is breached or altered. One or more electrically conductive nano-structures interconnect and reroute one or more electrical connections between one or more ICs to create an “invisible” set of electrical connections on the chip or stack to obfuscate an attempt to reverse engineer the device. microscope.

Abstract: A device and method are disclosed comprising one or more electrically conductive nano-structures defined on one or more surfaces of a microelectronic circuit such as an integrated circuit die, microelectronic circuit package (such as a TSOP, BGA or other prepackaged IC) a stacked microelectronic circuit package, or on the surface of one or more layers in a stack of layers containing one or more ICs. In one embodiment, the electrically conductive nano-structure is in electrical connection with a monitoring circuit and acts as a “trip wire” to detect unauthorized tampering with the device or module. Such a monitoring circuit may include a power source such as an in-circuit or in-module battery and a “zeroization” circuit within the chip or package to erase the contents of a memory when the electrically conductive nano-structure is breached or altered. The device may be configured to blow one or more fuses or overcurrent protection devices when the electrically conductive nano-structure is breached or altered.

Abstract: A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.

Abstract: A stackable layer and stacked multilayer module are disclosed. Individual integrated circuit die are tested and processed at the wafer level to create vertical area interconnect vias for the routing of electrical signals from the active surface of the die to the inactive surface. Vias are formed at predefined locations on each die on the wafer at the reticle level using a series of semiconductor processing steps. The wafer is passivated and the vias are filled with a conductive material. The bond pads on the die are exposed and a metallization reroute from the user-selected bond pads and vias is applied. The wafer is then segmented to form thin, stackable layers that can be stacked and vertically electrically interconnected using the conductive vias, forming high-density electronic modules which may, in turn, be further stacked and interconnected to form larger more complex stacks.

Abstract: A preprocessed semiconductor substrate such as a wafer is provided with a metal etch mask which defines singulation channels on the substrate surface. An isotropic etch process is used to define a singulation channel with a first depth extending into the semiconductor substrate material. A second anisotropic etch process is used to increase the depth of the singulation channel while providing substantially vertical singulation channel sidewalls. The singulation channel can be extended through the depth of the substrate or, in an alternative embodiment, a predetermined portion of the inactive surface of the substrate removed to expose the singulation channels. In this manner, semiconductor die can be precisely singulated from a wafer while maintaining vertical die sidewalls.

Abstract: A preprocessed semiconductor substrate such as a wafer is provided with a metal etch mask which defines singulation channels on the substrate surface. An isotropic etch process is used to define a singulation channel with a first depth extending into the semiconductor substrate material. A second anisotropic etch process is used to increase the depth of the singulation channel while providing substantially vertical singulation channel sidewalls. The singulation channel can be extended through the depth of the substrate or, in an alternative embodiment, a predetermined portion of the inactive surface of the substrate removed to expose the singulation channels. In this manner, semiconductor die can be precisely singulated from a wafer while maintaining vertical die sidewalls.