Abstract: A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First bond wires are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first bond wires include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first bond wires. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second bond wires are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second bond wires include an electrically insulative coating formed over the shaft of the second bond wires that covers a portion of a surface of a bumped end of the second bond wires.

Abstract: A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First bond wires are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first bond wires include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first bond wires. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second bond wires are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second bond wires include an electrically insulative coating formed over the shaft of the second bond wires that covers a portion of a surface of a bumped end of the second bond wires.

Abstract: A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First wire bonds are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first wire bonds include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first wire bonds. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second wire bonds are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second wire bonds include an electrically insulative coating formed over the shaft of the second wire bonds that covers a portion of a surface of a bumped end of the second wire bonds.

Abstract: A semiconductor package has a substrate with a plurality of contact pads. A first semiconductor die is mounted to the substrate. First wire bonds are formed between each of the center-row contact pads of the first semiconductor die and the substrate contact pads. The first wire bonds include an electrically insulative coating formed over the shaft that covers a portion of a surface of a bumped end of the first wire bonds. An epoxy material is deposited over the first semiconductor die. A second semiconductor die is mounted to the epoxy material. Second wire bonds are formed between each of the center-row contact pads of the second semiconductor die and the substrate contact pads. The second wire bonds include an electrically insulative coating formed over the shaft of the second wire bonds that covers a portion of a surface of a bumped end of the second wire bonds.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.

Abstract: Microelectronic contacts, such as flexible, tab-like, cantilever contacts, are provided with asperities disposed in a regular pattern. Each asperity has a sharp feature at its tip remote from the surface of the contact. As mating microelectronic elements are engaged with the contacts, a wiping action causes the sharp features of the asperities to scrape the mating element, so as to provide effective electrical interconnection and, optionally, effective metallurgical bonding between the contact and the mating element upon activation of a bonding material.