Abstract: Apparatus and methods for transceiver interface overvoltage clamping are provided. In certain configurations, an interface device includes a first p-type well region and a second p-type well region in an n-type isolation structure. Additionally, the clamp device includes a first p-type active region and a first n-type active region in the first p-type well region and electrically connected to a first terminal of the clamp device. Furthermore, the clamp device includes a second p-type active region and a second n-type active region in the second p-type well region and electrically connected to a second terminal of the clamp device. The n-type isolation structure is in a p-type region of a semiconductor substrate, and electrically isolates the first and second p-type well regions from the p-type substrate region. The clamp device further includes a blocking voltage tuning structure positioned between the first and second n-type active regions.

Abstract: Low leakage bidirectional clamps and methods of forming the same are provided. In certain configurations, a bidirectional clamp includes a first p-well region, a second p-well region, and an n-well region positioned between the first and second p-wells regions. The bidirectional clamp further includes two or more oxide regions over the n-well region, and one or more n-type active (N+) dummy blocking current regions are positioned between the oxide regions. The one or more N+ dummy leakage current blocking regions interrupt an electrical path from the first p-type well region to the second p-type well region along interfaces between the n-well region and the oxide regions. Thus, even when charge accumulates at the interfaces due to extended high voltage, e.g., >60V, and/or high temperature operation (e.g., >125° C.), the N+ dummy leakage current blocking regions inhibit charge trapping-induced leakage current.

Abstract: A support assembly includes a stand having an underside surface configured to be placed on top of a flat screen device and an upper surface configured to support at least one object; a mount secured to the underside surface of the stand, the mount presenting a first ratchet ring; an arm presenting a second ratchet ring; and a fastener positioned and arranged to mechanically connect the arm to the mount, causing the first ratchet ring to engage the second ratchet ring, setting the arm at a desired angle so that the arm engages the flat screen device while the stand extends at least substantially horizontally from the top of the flat screen device.

Abstract: Apparatus and methods for transceiver interface overvoltage clamping are provided. In certain configurations, an interface device includes a first p-type well region and a second p-type well region in an n-type isolation structure. Additionally, the clamp device includes a first p-type active region and a first n-type active region in the first p-type well region and electrically connected to a first terminal of the clamp device. Furthermore, the clamp device includes a second p-type active region and a second n-type active region in the second p-type well region and electrically connected to a second terminal of the clamp device. The n-type isolation structure is in a p-type region of a semiconductor substrate, and electrically isolates the first and second p-type well regions from the p-type substrate region. The clamp device further includes a blocking voltage tuning structure positioned between the first and second n-type active regions.

Abstract: Thermoplastic molding compositions comprising A) from 10 to 99% by weight of at least one thermoplastic polymer, B) from 0 to 50% by weight of B1) at least one highly branched or hyperbranched polycarbonate with an OH number of from 1 to 600 mg KOH/g of polycarbonate (to DIN 53240, Part 2), or B2) at least one highly branched or hyperbranched polyester of AxBy type, where x is at least 1.1 and y is at least 2.1, or a mixture of these, C) from 1 to 30% by weight of a flame retardant combination composed of, based on 100% by weight of C), C1) from 20 to 99% by weight of a halogen-containing epoxy resin, C2) from 1 to 80% by weight of an antimony oxide, D) from 0 to 60% by weight of other additives, where the total of the percentages of components A) to D) is 100%.