Patents by Inventor JAMEYUNG KIM

JAMEYUNG KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162256
    Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.
    Type: Application
    Filed: June 29, 2023
    Publication date: May 16, 2024
    Inventors: Kyoungeun Chang, Sungin Kim, Jameyung Kim, Incheol Cho
  • Patent number: 11881496
    Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: January 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jameyung Kim, Tae-Hun Lee, Dongmo Im, Kwansik Cho
  • Publication number: 20220208817
    Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.
    Type: Application
    Filed: December 27, 2021
    Publication date: June 30, 2022
    Inventors: Jameyung KIM, Sungin KIM, Dongmo IM
  • Publication number: 20220102398
    Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.
    Type: Application
    Filed: April 30, 2021
    Publication date: March 31, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jameyung KIM, Tae-Hun LEE, Dongmo IM, Kwansik CHO
  • Patent number: 11183526
    Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 23, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Ho Ro, Doowon Kwon, Seokjin Kwon, Jameyung Kim, Jinyoung Kim, Sungki Min, Kwansik Cho, Mangeun Cho, Ho-Chul Ji
  • Publication number: 20200219912
    Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.
    Type: Application
    Filed: December 3, 2019
    Publication date: July 9, 2020
    Inventors: IN HO RO, DOOWON KWON, SEOKJIN KWON, JAMEYUNG KIM, JINYOUNG KIM, SUNGKI MIN, KWANSIK CHO, MANGEUN CHO, HO-CHUL JI