Patents by Inventor Jamie K. Schaeffer

Jamie K. Schaeffer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and a method therefor
    Patent number: 6518106
    Abstract: A semiconductor device with dual gate electrodes and its method of formation is taught. A first metal/silicon gate stack and a first gate dielectric are formed over a first doped region. The metal/gate stack comprises a metal portion over the first gate dielectric and a first gate portion over the metal portion. A silicon gate and a second gate dielectric are formed over the second doped region. In one embodiment, the first and second gate portions are P+ doped silicon germanium and the metal portion is TaSiN. In another embodiment, the first and second gate portions are N+ doped polysilicon and the metal portion is TaSiN.
    Type: Grant
    Filed: May 26, 2001
    Date of Patent: February 11, 2003
    Assignee: Motorola, Inc.
    Inventors: Tat Ngai, Bich-Yen Nguyen, Vidya S. Kaushik, Jamie K. Schaeffer