Patents by Inventor Jamie Saephan

Jamie Saephan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8871650
    Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: October 28, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas D. Nemani, Nicolas J. Bright, Thorsten B. Lill, Yifeng Zhou, Jamie Saephan, Ellie Yieh
  • Publication number: 20130109187
    Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
    Type: Application
    Filed: October 5, 2012
    Publication date: May 2, 2013
    Inventors: Srinivas D. Nemani, Nicolas J. Bright, Thorsten B. Lill, Yifeng Zhou, Jamie Saephan, Ellie Yieh