Patents by Inventor Jamil Kahn Muhammad

Jamil Kahn Muhammad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate
    Patent number: 8889530
    Abstract: A highly dislocation free compound semiconductor, e.g. AlxInyGa1-x-yN (0?x, y?1), is formed on a lattice mismatched substrate, e.g. Si, by first depositing a polycrystalline buffer layer on the substrate. A defective layer is then created at or near the interface of the substrate and the polycrystalline buffer layer, e.g. through ion implantation. A monocrystalline template layer of the compound semiconductor is then created on the buffer layer, and an epilayer of the compound semiconductor is grown on the template layer. A compound semiconductor based device structure may be formed in the epilayer.
    Type: Grant
    Filed: January 27, 2006
    Date of Patent: November 18, 2014
    Assignee: The Research Foundation of State University of New York
    Inventors: Fatemeh Shahedipour-Sandvik, Di Wu, Jamil Kahn Muhammad