Patents by Inventor Jamin Fen

Jamin Fen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double anneal with improved reliability for dual contact etch stop liner scheme
    Publication number: 20070138564
    Abstract: A method for forming a device with both PFET and NFET transistors using a PFET compressive etch stop liner and a NFET tensile etch stop liner and two anneals in a deuterium containing atmosphere. The method comprises: providing a NFET transistor in a NFET region and a PFET transistor in a PFET region. We form a NFET tensile contact etch-stop liner over the NFET region. Then we perform a first deuterium anneal. We form a PFET compressive etch stop liner over the PFET region. We form a (ILD) dielectric layer with contact openings over the substrate. We perform a second deuterium anneal. The temperature of the second deuterium anneal is less than the temperature of the first deuterium anneal.
    Type: Application
    Filed: December 15, 2005
    Publication date: June 21, 2007
    Inventors: Khee Lim, Victor Chan, Eng Lim, Wenhe Lin, Jamin Fen