Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: A light source apparatus includes a light source disposed adjacent to a side portion of a light guide plate and a light source driver driving the light source. The light source driver includes a booster and a protecting circuit. The booster boosts an input voltage to a driving voltage for driving the light source. The protecting circuit selectively cuts off the input voltage applied to the booster according to an output current of the booster, reducing the risk of damage to the driver due to shorts, overcurrents, or the like.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: A light source apparatus includes a light source disposed adjacent to a side portion of a light guide plate and a light source driver driving the light source. The light source driver includes a booster and a protecting circuit. The booster boosts an input voltage to a driving voltage for driving the light source. The protecting circuit selectively cuts off the input voltage applied to the booster according to an output current of the booster, reducing the risk of damage to the driver due to shorts, overcurrents, or the like.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

Abstract: An embryonic stem cell line derived from a nucleus-transferred oocyte prepared by transferring a nucleus of a human somatic cell into an enucleated human oocyte may differentiate into various desired cell types.