Patents by Inventor Jaming CHANG

Jaming CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Fin Cutting Process and Structures Formed Thereby
    Publication number: 20220328360
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
    Type: Application
    Filed: June 29, 2022
    Publication date: October 13, 2022
    Inventors: Shih-Wen Huang, Jaming Chang, Kai Hung Cheng, Chia-Hui Lin, Jei Ming Chen
  • Semiconductor fin cutting process and structures formed thereby
    Patent number: 11380593
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wen Huang, Jaming Chang, Kai Hung Cheng, Chia-Hui Lin, Jei Ming Chen
  • Semiconductor Fin Cutting Process and Structures Formed Thereby
    Publication number: 20200411386
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
    Type: Application
    Filed: September 14, 2020
    Publication date: December 31, 2020
    Inventors: Shih-Wen Huang, Jaming Chang, Kai Hung Cheng, Chia-Hui Lin, Jei Ming Chen
  • Semiconductor Fin cutting process and structures formed thereby
    Patent number: 10777466
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: September 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wen Huang, Chia-Hui Lin, Jaming Chang, Jei Ming Chen, Kai Hung Cheng
  • SEMICONDUCTOR STRUCTURE CUTTING PROCESS AND STRUCTURES FORMED THEREBY
    Publication number: 20190164844
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
    Type: Application
    Filed: March 15, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wen HUANG, Chia-Hui LIN, Jaming CHANG, Jei Ming CHEN, Kai Hung CHENG