Patents by Inventor Jamshed Hoshang Dubash

Jamshed Hoshang Dubash has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methodology for in situ etch stop detection and control of plasma etching process and device design to minimize process chamber contamination
    Patent number: 5788869
    Abstract: A method of etching a dielectric layer to form a via to an underlying conductive layer is described. The method includes etching selected portions of the dielectric using a plasma containing an etchant and monitoring electromagnetic energy of plasma emission radiation from the species to determine a ratio of a pair of the species in the plasma that is used to indicate the onset of an etch stop phenomenon. Etching of the dielectric continues and additional dielectrics are processed through the plasma etching step while the ratio of species is less than a predetermined threshold value. The process is stopped and a plasma reactor is cleaned once the ratio of the etchants exceeds the threshold value. The method can be used to form vias between a pair of conductive layers.
    Type: Grant
    Filed: November 2, 1995
    Date of Patent: August 4, 1998
    Assignee: Digital Equipment Corporation
    Inventors: Timothy J. Dalton, Ann C. Westerheim, Jamshed Hoshang Dubash, Marion Garver, Richard A. Bickford