Abstract: Using two uniaxial optical crystals of trigonal 3 m symmetry, and with their optical axes aligned perpendicular to each other, a fast spatial light switch is disclosed based on changing the refractive index and optical axes of one of the crystals using Pockels effect. The first crystal in which Pockels effect is induced has electrodes along top and bottom sides. The interface between the crystals is at an angle such that the beam of light is totally reflected out of the first crystal. When an electric field is impressed through the first crystal, its refractive indices and crystal axes are altered such that the interface becomes transmissive, with the beam exiting from the second crystal. Spatial separation of Transmissive and Reflective States provides >50 dB of Cross-talk and Extinction ratios.

Abstract: Optical guided mode fast 1×2 and 2×2 spatial switches are provided that can be used in multimedia communication networks. These switches require a relative refractive index change of only 0.0001˜0.0002 and can be realized using Lithium Niobate, Polymers, semiconductors, etc. Extinction ratios of these switches are made to be better than 45 dB, by introductions of a rear edge adjusted broken electrode and a blocker electrode into their architecture. Optical losses are less than 3 dB, and excellent switching characteristics are achieved by suppressing cross talk to ˜50 dB. The two output ports of the 1×2 (2×2) switch are made to be spatially perpendicular (in opposition) by introduction of air grooves, allowing for two-dimensional integration of unit switches into matrices. System applications of the switch are made flexible due to a discrete drive requirement for each optical input to the 2×2 switch.

Abstract: Optical guided mode fast 1×2 and 2×2 spatial switches are provided that can be used in multimedia communication networks. These switches require a relative refractive index change of only 0.0001˜0.0002 and can be realized using Lithium Niobate, Polymers, semiconductors, etc. Extinction ratios of these switches are made to be better than 45 dB, by introductions of a rear edge adjusted broken electrode and a blocker electrode into their architecture. Optical losses are less than 3 dB, and excellent switching characteristics are achieved by suppressing cross talk to ˜50 dB. The two output ports of the 1×2 (2×2) switch are made to be spatially perpendicular (in opposition) by introduction of air grooves, allowing for two-dimensional integration of unit switches into matrices. System applications of the switch are made flexible due to a discrete drive requirement for each optical input to the 2×2 switch.

Abstract: An optical spatial switch with perpendicular states and capability of high-speed operation in the range of about 100 Gb/sec is provided. The switch is made of n-i-p semiconductor waveguides of, for example, GaInAs/InP for operation at 1.55 &mgr;m wavelength or PbTe for operation at 3.39 &mgr;m in the form of multiquantum wells grown with a boundary plane with air formed as an exponential spiral. The waveguide claddings may be of n and p doped layers, with the core of i-type quantum wells separated by barriers. The waveguides of ports of incidence and reflection are made to be at critical (Brewester) angle of semiconductor/air interface for the case of decreasing (or increasing) refractive index due to the application of voltage and the port of transmission waveguide in the form of, for example an optical fiber, brought close to the boundary and aligned at the Brewester angle in the air. The hot and ground electrodes are made so that their edges are aligned to the curved semiconductor/air boundary.

Abstract: An optical waveguide device usable as an optical wave-modulator and having a reduced DC drift includes a LiNbO.sub.3 substrate, an optical waveguide formed in a front surface portion of the substrate, a dielectric layer covering the front surface of the substrate and the optical waveguide surface, and an electrode system arranged on the dielectric layer, the dielectric layer comprising a matrix component consisting of an amorphous SiO.sub.2 and a doping element component consisting of Li and/or Nb; and having a refractive index lower than that of the amorphous SiO.sub.2 matrix free from the doping element component.