Abstract: The invention relates to a semiconductor device having a semiconductor body which comprises a circuit element having doped polycrystalline silicon.The doping comprises carbon in a concentration higher than 1 ppm. Polysilicon thus doped has properties which are not influenced by temperature treatments of the semiconductor body. Dopant is gaseous unsaturated hydrocarbon, e.g. acetylene.

Abstract: A method of manufacturing a semiconductor device in which a monocrystalline material is epitaxially grown on a disc-shaped monocrystalline substrate. The substrate is placed in an elongate reactor and a gas flow in the longitudinal direction is passed over the substrate while a temperature gradient is maintained in the gas flow. The gas flow initially contains the reaction components in equilibrium with the material to be grown, and the gas flow becomes supersaturated with respect to the material to be grown as the temperature gradient is traversed. If the temperature gradient is selected so that the gas flow becomes undersaturated with respect to the material to be grown, etching will take place.

Abstract: A low-pressure mercury vapor discharge lamp, having a discharge space containing thermally emitting electrodes and a mercury amalgam which is composed of mercury, bismuth, tin and lead.This amalgam causes the mercury vapor pressure to remain stable at the value of 6 .times. 10.sup.-3 torr which is the optimum value for the conversion of electric energy into ultraviolet radiation over a wide temperature range. In addition, the mercury vapor pressure at room temperature is still sufficiently high to ensure rapid starting.