Patents by Inventor Jan Evert Van Der Werf
Jan Evert Van Der Werf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7630060Abstract: A device manufacturing method is disclosed. The method includes patterning a beam of radiation, projecting the patterned beam of radiation onto a plurality of outer target portions of a substrate in a sequence in which each subsequent outer target portion is spaced-apart from a preceding outer target portion, and subsequent to projecting the patterned beam of radiation on the plurality of outer target portions, projecting the patterned beam of radiation onto an inner target portion of the substrate.Type: GrantFiled: October 13, 2004Date of Patent: December 8, 2009Assignee: ASML Netherlands B.V.Inventors: Joost Jeroen Ottens, Levinus Pieter Bakker, Wilhelmus Josephus Box, Jan Van Elp, Frank Jeroen Pieter Schuurmans, Jan Evert Van Der Werf
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Patent number: 7505116Abstract: A reflector alignment system uses an alignment beam propagating through a projection system that includes a mirror group to measure the apparent relative positions of two reference marks fixed to a reference frame on opposite sides of the projection system. Any movement of mirrors in the projection system will be detected as a shift in the apparent position of the reference marks.Type: GrantFiled: August 12, 2005Date of Patent: March 17, 2009Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, George Arie Jan Fockert, Hans Van Der Laan
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Patent number: 7499149Abstract: A holographic mask includes a plurality of pixels each imparting a calculated phase and/or amplitude change to the projection beam to provide an image that is parallel to the mask. The holographic mask is used displaced from the best object plane of the projection lens.Type: GrantFiled: June 22, 2004Date of Patent: March 3, 2009Assignee: ASML Netherlands B.V.Inventors: Bernardus Hendrikus Wilhelmus Hendriks, Jan Evert Van Der Werf
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Patent number: 7492443Abstract: A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.Type: GrantFiled: December 29, 2004Date of Patent: February 17, 2009Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, Erik Roelof Loopstra, Hans Meiling, Johannes Hubertus Josephina Moors, Martinus Hendrikus Antonius Leenders
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Publication number: 20090041077Abstract: An arrangement for read-out of information from an optical information carrier is disclosed. The system comprises a VCSEL for improving the signal-to-noise ratio of light reflected from and modulated by an information carrier. The VCSEL has a substrate that transmits the emission from the active regions of the VCSEL. Thereby, the need for beam-splitters in the detection branch of the device is completely eliminated.Type: ApplicationFiled: December 14, 2004Publication date: February 12, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONIC, N.V.Inventors: Ole Klembt Andersen, Robert Frans Maria Hendriks, Alexander Marc Van Der Lee, Jan Evert Van Der Werf
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Patent number: 7459690Abstract: A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength ?1 into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.Type: GrantFiled: May 12, 2006Date of Patent: December 2, 2008Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, Mark Kroon, Wilhelmus Cornelis Keur, Vadim Yevgenyevich Banine, Hans Van Der Laan, Johannes Hubertus Josephina Moors, Erik Roelof Loopstra
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Patent number: 7453577Abstract: An inspection apparatus is disclosed having an radiation system configured to provide an radiation beam, a beamnsplitter configured to create, from the radiation beam, a first illumination beam and a second illumination beam directed to a planar reference part of a sample and a patterned part of the sample, respectively, and a beam detector configured to detect a detection beam, the detection beam comprising a recombination of radiation scattered from the planar reference part and the patterned part.Type: GrantFiled: December 14, 2004Date of Patent: November 18, 2008Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, Arie Jeffrey Den Boef, Cristian-Nicolae Presura
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Publication number: 20080212053Abstract: A device manufacturing method is disclosed. The method includes patterning a beam of radiation, projecting the patterned beam of radiation onto a plurality of outer target portions of a substrate in a sequence in which each subsequent outer target portion is spaced-apart from a preceding outer target portion, and subsequent to projecting the patterned beam of radiation on the plurality of outer target portions, projecting the patterned beam of radiation onto an inner target portion of the substrate.Type: ApplicationFiled: October 13, 2004Publication date: September 4, 2008Applicant: ASML NETHERLANDS B.V.Inventors: Joost Jeroen Ottens, Levinus Pieter Bakker, Wilhelmus Josephus Box, Jan Van Elp, Frank Jeroen Pieter Schuurmans, Jan Evert Van Der Werf
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Patent number: 7309869Abstract: A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.Type: GrantFiled: May 12, 2005Date of Patent: December 18, 2007Assignee: ASML Netherlands B.V.Inventors: Ralph Kurt, Levinus Pieter Bakker, Frank Jeroen Pieter Schuurmans, Jan Evert Van Der Werf
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Patent number: 7307712Abstract: A method of detecting mask defects in which a reference substrate is patterned by the mask immediately after manufacture of the mask is disclosed. The reference substrate is stored in clean conditions while IC manufacture takes place. When a mask defect is suspected, a resist coated substrate, the test substrate, is patterned by exposure of the mask. The patterns on the reference substrate and the test substrate are compared to determine if there is a mask defect. The location of the mask defect can be found by scanning smaller areas of the patterns.Type: GrantFiled: October 27, 2003Date of Patent: December 11, 2007Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, Auke Jan Mud
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Patent number: 7283236Abstract: A marker structure on a substrate includes line elements and trench elements, the line elements and trench elements each having a length in a first direction and being arranged in an alternating repetitive sequence in a second direction perpendicular to the first direction, the alternating repetitive sequence having a sequence length, the marker structure having at least one pitch value, the at least one pitch value being the sum of a line width of one line element and a trench width of one trench element. A width of the line elements varies over the sequence length of the marker structure between a minimum line width value and a maximum line width value, while a width of the trench elements likewise varies over the sequence length of the marker structure between a minimum trench width value and a maximum trench width value. A duty cycle of a pair of a line element and an adjacent trench element is substantially constant over the sequence length of the marker structure.Type: GrantFiled: July 2, 2004Date of Patent: October 16, 2007Assignee: ASML Netherlands B.V.Inventors: Cristian Presura, Jan Evert Van Der Werf
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Patent number: 7277185Abstract: In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.Type: GrantFiled: June 16, 2005Date of Patent: October 2, 2007Assignee: ASML Netherlands B.V.Inventors: Rene Monshouwer, Jacobus Hermanus Maria Neijzen, Jan Evert Van Der Werf
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Patent number: 7105837Abstract: A lithographic projection apparatus includes an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam of radiation with a pattern in its cross section; a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate, wherein the illumination system has a radiation source and at least one mirror configured to enhance an output of the source. The illumination system may include a second radiation source and at least one mirror positioned between the radiation sources to image the output of the second source onto the first source, thereby enhancing the output of the source. The radiation sources may be operable to emit radiation in the EUV wavelength range.Type: GrantFiled: May 13, 2004Date of Patent: September 12, 2006Assignee: ASML Netherlands B.V.Inventors: Ralph Kurt, Levinus Pieter Bakker, Frank Jeroen Pieter Schuurmans, Jan Evert Van Der Werf
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Patent number: 7095499Abstract: For determining the alignment of a substrate with respect to a mask, a substrate alignment mark, having a periodic structure, and an additional alignment mark, having a periodic structure and provided in a resist layer on top of the substrate, are used. Upon illumination of these two marks, having a period which is considerably smaller than that of a reference mark, an interference pattern is generated, which has a period corresponding to that of the reference mark. By measuring the movement of the interference pattern with respect to the refernce mark, the much smaller mutual movement of the fine alignment marks can be measured. In this way, the resolution and accuracy of a conventional alignment device can be increased considerably.Type: GrantFiled: June 15, 2005Date of Patent: August 22, 2006Assignee: ASML Netherlands B.V.Inventors: Rene Monshouwer, Jacobus Hermanus Maria Neijzen, Jan Evert Van Der Werf
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Patent number: 7075620Abstract: A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength ?1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength ?1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.Type: GrantFiled: April 8, 2004Date of Patent: July 11, 2006Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, Mark Kroon, Wilhelmus Cornelis Keur, Vadim Yevgenyevich Banine, Hans Van Der Laan, Johannes Hubertus Josephina Moors, Erik Roelof Loopstra
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Patent number: 7012673Abstract: Liquid is supplied to a space between a projection system of a lithographic apparatus and a substrate, but there is a space between the liquid and the substrate. An evanescent field may be formed between the liquid and the substrate allowing some photons to expose the substrate. Due to the refractive index of the liquid, the resolution of the system may be improved and liquid on the substrate may be avoided.Type: GrantFiled: June 14, 2004Date of Patent: March 14, 2006Assignee: ASML Netherlands B.V.Inventors: Aleksey Yurievich Kolesnychenko, Jan Evert Van Der Werf
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Patent number: 6963391Abstract: A reflector alignment system uses an alignment beam propagating through a projection system that includes a mirror group to measure the apparent relative positions of two reference marks fixed to a reference frame on opposite sides of the projection system. Any movement of mirrors in the projection system will be detected as a shift in the apparent position of the reference marks.Type: GrantFiled: July 14, 2003Date of Patent: November 8, 2005Assignee: ASML Netherlands B.V.Inventors: Jan Evert Van Der Werf, George Arie Jan Fockert, Hans Van Der Laan
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Patent number: 6937344Abstract: In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.Type: GrantFiled: August 28, 2001Date of Patent: August 30, 2005Assignee: ASML Netherlands B.V.Inventors: Rene Monshouwer, Jacobus Hermanus Maria Neijzen, Jan Evert Van Der Werf
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Patent number: 6937334Abstract: For determining the alignment of a substrate with respect to a mask, a substrate alignment mark having a periodic structure, and an additional alignment mark, having a periodic structure and provided in a resist layer (RL) on top of the substrate, are used. Upon illumination of these two marks, having a period which is considerably smaller than that of a reference mark, an interference pattern (Pb) is generated, which has a period corresponding to that of the reference mark. By measuring the movement of the interference pattern with respect to the reference mark, the much smaller mutual movement of the fine alignment marks can be measured. In this way, the resolution and accuracy of a conventional alignment device can be increased considerably.Type: GrantFiled: August 28, 2001Date of Patent: August 30, 2005Assignee: ASML Netherlands B.V.Inventors: Rene Monshouwer, Jacobus Hermanus Maria Neijzen, Jan Evert Van Der Werf
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Publication number: 20050146703Abstract: A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of raditaion as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.Type: ApplicationFiled: December 29, 2004Publication date: July 7, 2005Applicant: ASML NETHERLANDS B.VInventors: Jan Evert Van Der Werf, Erik Roelof Loopstra, Hans Meiling, Johannes Hubertus Josephina Moors, Martinus Hendrikus Antonius Leenders