Patents by Inventor Jan-Fu Yang

Jan-Fu Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF ADJUSTING CHANNEL WIDTHS OF SEMICONDUCTIVE DEVICES
    Publication number: 20170025286
    Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.
    Type: Application
    Filed: July 26, 2015
    Publication date: January 26, 2017
    Inventors: Yu-Te Chen, Chia-Hsun Tseng, En-Chiuan Liou, Chiung-Lin Hsu, Meng-Lin Tsai, Jan-Fu Yang, Yu-Ting Hung, Shin-Feng Su
  • Method of adjusting channel widths of semiconductive devices
    Patent number: 9548216
    Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.
    Type: Grant
    Filed: July 26, 2015
    Date of Patent: January 17, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Te Chen, Chia-Hsun Tseng, En-Chiuan Liou, Chiung-Lin Hsu, Meng-Lin Tsai, Jan-Fu Yang, Yu-Ting Hung, Shin-Feng Su