Abstract: Aspects of the subject disclosure include, for example, constructing a mechanical resonating structure by applying an active layer on a surface of a compensating structure, wherein the compensating structure comprises one or more materials having an adaptive resistance to deform that reduces a variance in a resonating frequency of the mechanical resonating structure, wherein at least the active layer and the compensating structure form a mechanical resonating structure having a plurality of layers of materials, and wherein a thickness of each of the plurality of layers of materials results in a plurality of thickness ratios therebetween. Other embodiments are disclosed.

Abstract: In one embodiment, an apparatus includes a resonant structure having a plate, a drive electrode and a sense electrode. The resonant structure defines an axis substantially orthogonal to a plane defined by the plate when the resonant structure is not excited. The plate is formed from a piezoelectric material. The drive electrode is configured to excite the resonant structure, and the sense electrode is configured to sense a signal in response to rotation of the resonant structure about the axis.

Abstract: Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Abstract: Mechanical resonating structures and related methods are described. The mechanical resonating structures may provide improved efficiency over conventional resonating structures. Some of the structures have lengths and widths and are designed to vibrate in a direction approximately parallel to either the length or width. They may have boundaries bounding the length and width dimensions, which may substantially align with nodes or anti-nodes of vibration.

Abstract: Systems and methods for operating with oscillators configured to produce an oscillating signal having an arbitrary frequency are described. The frequency of the oscillating signal may be shifted to remove its arbitrary nature by application of multiple tuning signals or values to the oscillator. Alternatively, the arbitrary frequency may be accommodated by adjusting operation one or more components of a circuit receiving the oscillating signal.

Abstract: In one embodiment, an apparatus comprises a micromechanical gyroscope and a circuit. The micromechanical gyroscope is configured to be excited in a first mode by a drive signal, and configured to be excited in a second mode by a gyroscopic effect. The circuit is coupled to the micromechanical gyroscope and configured to detect the gyroscopic effect when the micromechanical gyroscope is in the second mode.

Abstract: Methods and apparatus for calibration and temperature compensation of oscillators having mechanical resonators are described. The method(s) may involve measuring the frequency of the oscillator at multiple discrete temperatures and adjusting compensation circuitry of the oscillator at the various temperatures. The compensation circuitry may include multiple programmable elements which may independently adjust the frequency behavior of the oscillator at a respective temperature. Thus, adjustment of the frequency behavior of the oscillator at one temperature may not alter the frequency behavior at a second temperature.

Abstract: Systems and methods for operating with oscillators configured to produce an oscillating signal having an arbitrary frequency are described. The frequency of the oscillating signal may be shifted to remove its arbitrary nature by application of multiple tuning signals or values to the oscillator. Alternatively, the arbitrary frequency may be accommodated by adjusting operation one or more components of a circuit receiving the oscillating signal.

Abstract: Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Abstract: Aspects of the subject disclosure include, for example, obtaining a mechanical resonating structure comprising a compensating structure, where the compensating structure comprises one or more materials having an adaptive stiffness that reduces a variance in a resonating frequency of the mechanical resonating structure (f0), and adjusting at least one of a value of f0 of the obtained mechanical resonating structure or a value of a temperature for which temperature coefficient of frequency of the obtained mechanical resonating structure is approximately zero (T0) by altering a thickness of at least one targetable material of the mechanical resonating structure. Other embodiments are disclosed.

Abstract: Multi-port devices having multiple electrical ports are described, as are related methods. Some of the multi-port devices may have two input ports and two output ports, and may be driven differentially, in a single-ended mode, in a single-ended to differential mode, or in a differential to single-ended mode. The multi-port devices may include one or more transducers coupled to the electrical ports.

Abstract: Systems and methods for operating with oscillators configured to produce an oscillating signal having an arbitrary frequency are described. The frequency of the oscillating signal may be shifted to remove its arbitrary nature by application of multiple tuning signals or values to the oscillator. Alternatively, the arbitrary frequency may be accommodated by adjusting operation one or more components of a circuit receiving the oscillating signal.

Abstract: Techniques for bonding wafers together are described. The wafers may be bonded via a eutectic bond. In some instances, one wafer has an integrated circuit and a second wafer has a microelectromechanical systems (MEMS) feature. The wafer with an integrated circuit may have a metal formed thereon for bonding purposes and the wafer with the MEMS feature may have a semiconductor formed thereon for bonding purposes.

Abstract: Passivated micromechanical resonators and related methods are described. Applicants have appreciated that polycrystalline conductive layers used as electrodes for some MEMS resonators are a source of mechanical and electrical instability. To inhibit or prevent contamination of such conductive layers, which may exacerbate the instabilities, passivation structures are used. The passivation structures can be grown, deposited, or otherwise formed.

Abstract: An apparatus is described that includes a substrate having a first plate and a second plate. The first plate and the second plate collectively have a first mode when excited by a drive signal and have a second mode when excited by a gyroscopic effect. The first and second plates each include a temperature-compensated stack having first and third layers that have a stiffness that increases with increasing temperature over a temperature range with a second layer between the first and third layers, where the second layer is formed from a different material than the first and third layers.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: Resonator structures and electrodes are described, as well as methods for manufacturing the same. Resonator electrodes may be formed using two or more photolithographic steps and masks, with different masks being used to define different features of the electrodes. The masks may create self-aligned electrodes, which can be aligned with one or more anchors of the resonator.

Abstract: Systems and methods for operating with oscillators configured to produce an oscillating signal having an arbitrary frequency are described. The frequency of the oscillating signal may be shifted to remove its arbitrary nature by application of multiple tuning signals or values to the oscillator. Alternatively, the arbitrary frequency may be accommodated by adjusting operation one or more components of a circuit receiving the oscillating signal.

Abstract: Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Abstract: Integrated circuits having electrically conductive traces are described. The electrically conductive traces may be formed of multiple electrically conductive layers. One or more of the multiple electrically conductive layers may have a cut formed therein to form a gap in that electrically conductive layer. One or more electrical conductive layers of the electrical conductive traces may bridge the gap.