Patents by Inventor Jan J. Buzniak

Jan J. Buzniak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210033783
    Abstract: A wavelength shifting fiber and method of making the same is disclosed. A wavelength shifting fiber can include a plastic core and a coating surrounding the plastic core. The numerical aperture for the wavelength shifting fiber can be at least about 0.53. A method of making a wavelength shifting fiber can include heating and drawing a plastic core precursor to form a plastic core, coating the plastic core with a liquid coating, and curing the liquid coating around the plastic core to form a wavelength shifting fiber.
    Type: Application
    Filed: July 28, 2020
    Publication date: February 4, 2021
    Inventor: Jan J. BUZNIAK
  • Patent number: 9551089
    Abstract: The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: January 24, 2017
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
  • Publication number: 20160090667
    Abstract: A feed system for a crystal growth apparatus can include a deadsorption unit and a tube. In an embodiment, the deadsorption unit can deadsorb an impurity from a material used to form a crystal. The tube can be fluidly coupled to the deadsorption unit and the crystal growth apparatus to transfer the material from a lower point to a higher point. In another embodiment, any finite number of deadsorption units may be coupled to any finite number of crystal growth apparatuses. In a further embodiment, a crystal growth system can include the feed system and a crystal growth apparatus, wherein the feed system can continuously provide crystal-forming material to the crystal growth apparatus as a crystal is being formed.
    Type: Application
    Filed: September 28, 2015
    Publication date: March 31, 2016
    Inventors: Jan J. BUZNIAK, Charles J. GASDASKA, John M. FRANK
  • Publication number: 20160090663
    Abstract: A method can include deadsorbing an impurity from an initial material to form a deadsorbed material, melting the deadsorbed material to form a melt within the crucible, and growing a crystal from the melt. In an embodiment, growing is performed at a growth rate that is at least 1.1 times a growth rate of a different crystal formed from a melt of the initial material using a same crystal growth technique, having a same cross-sectional shape, size, and crystal orientation, and a same haze level. In another embodiment, the method can include crushing an initial material to reduce closed porosity before or during deadsorbing impurities.
    Type: Application
    Filed: September 28, 2015
    Publication date: March 31, 2016
    Inventors: Jan J. Buzniak, Charles J. Gasdaska, John M. Frank, Guilford L. Mack, III
  • Publication number: 20150241578
    Abstract: A scintillator stack includes a neutron-sensitive particulate material and a scintillator particulate material dispersed in separate layers. The scintillator stack can be included in a scintillator device. The scintillator stack can be made using a co-extrusion method.
    Type: Application
    Filed: February 27, 2015
    Publication date: August 27, 2015
    Inventors: Peter R. Menge, Kan Yang, Michael R. Mayhugh, Jan J. Buzniak, Mark R. De Guire, James McGuffin-Cawley
  • Publication number: 20140311402
    Abstract: The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.
    Type: Application
    Filed: March 14, 2014
    Publication date: October 23, 2014
    Applicant: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
  • Publication number: 20140272413
    Abstract: The present disclosure is directed to an apparatus and method for forming sapphire ribbons via Edge-Defined Film-Fed Growth (EFG). Further, the present disclosure is directed to a plurality of concurrently grown sapphire ribbons having features such as a low dimensional variability and elimination of voiding between the sapphire ribbons concurrently grown in a batch.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Marc Ouellette, Joseph M. Collins, John Walter Locher, Guilford L. Mack, III, Abbie M. Jennings, Jan J. Buzniak, Christopher D. Jones
  • Publication number: 20140102358
    Abstract: An apparatus, die, and method can be used form a ribbon from a melt, where capillaries are relatively short and spacers are relatively long as compared to a die opening. Such a configuration can cause the melt to flow is a transverse direction that is substantially parallel to the solid/liquid interface to help move impurities to desired locations. In a particular embodiment, a crystal ribbon can be formed where defects, such as microvoids and impurities, are at higher concentrations near outer edges of the crystal ribbon. The outer edges can be removed to produce crystal substrates that are substantially free of microvoids and have no or a relatively low concentration of impurities. In another particular embodiment, the transverse flow can also help to increase the crystal growth rate.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 17, 2014
    Inventors: Jan J. Buzniak, Naveen Tiwari, Vignesh Rajamani, Charles Gasdaska, Christopher D. Jones, Guilford L. Mack, III, Fery Pranadi, Maureen DeLoffi, Martin Z. Bazant
  • Patent number: 6093245
    Abstract: Alkali halide crystal is grown from a melt in a novel graphite crucible which has a surface depth region of its inside surface impregnated with glassy carbon to eliminate porosity, so that the melt does not leak through or wet the carbon. Additionally, the graphite may be coated with glassy carbon to provide a smoother surface. Also disclosed is a porous graphite crucible lined with a layer of graphitic pyrolytic carbon to prevent wetting of the surface by the melt and to permit release of the cooled crystal without remelting.
    Type: Grant
    Filed: March 25, 1999
    Date of Patent: July 25, 2000
    Assignee: Saint-Gobain Industrial Ceramics, Inc.
    Inventors: David A. Hammond, Jan J. Buzniak, Kimberly A. Grencewicz, Milan R. Vukcevich
  • Patent number: 5911824
    Abstract: Alkali halide crystal is grown from a melt in a novel graphite crucible which has a surface depth region of its inside surface impregnated with glassy carbon to eliminate porosity, so that the melt does not leak through or wet the carbon. Additionally, the graphite may be coated with glassy carbon to provide a smoother surface. Also disclosed is a porous graphite crucible lined with a layer of graphitic pyrolytic carbon to prevent wetting of the surface by the melt and to permit release of the cooled crystal without remelting.
    Type: Grant
    Filed: December 16, 1997
    Date of Patent: June 15, 1999
    Assignee: Saint-Gobain Industrial Ceramics, Inc.
    Inventors: David A. Hammond, Jan J. Buzniak, Kimberly A. Grencewicz, Milan R. Vukcevich