Patents by Inventor Jan Jacob Koning

Jan Jacob Koning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11064924
    Abstract: A wearable ultrasound device for signalling changes in human or animal body, and use of such a wearable device for signalling over a prolonged period of time. In an example the changes occur in a bladder. Such is especially relevant for elderly persons, women after delivery of a baby, lesion patients, demented people, children, and others, have a difficulty to control functioning of the bladder, and to be at the toilet on time to urinate.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: July 20, 2021
    Assignee: NovioScan B.V.
    Inventors: Reinout Woltjer, Huibert Alexander Tjabbes, Renatus Eligius Van de Vosse, Jan Jacob Koning, Paulus Gerardus Van Leuteren, Pieter Dik, Albert Harald Westra, Leonard Jan Van Schelven
  • Patent number: 9800223
    Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: October 24, 2017
    Assignee: NXP B.V.
    Inventors: Joep J. M. Bontemps, Jan Jacob Koning, Casper van der Avoort, Jozef Thomas Martinus van Beek
  • Publication number: 20170258386
    Abstract: A wearable ultrasound device for signalling changes in human or animal body, and use of such a wearable device for signalling over a prolonged period of time. In an example the changes occur in a bladder. Such is especially relevant for elderly persons, women after delivery of a baby, lesion patients, demented people, children, and others, have a difficulty to control functioning of the bladder, and to be at the toilet on time to urinate.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Inventors: Reinout Woltjer, Huibert Alexander Tjabbes, Renatus Eligius Van de Vosse, Jan Jacob Koning, Paulus Gerardus Van Leuteren, Pieter Dik, Albert Harald Westra, Leonard Jan Van Schelven
  • Publication number: 20170042507
    Abstract: An improved high voltage MEMS, and a portable ultrasound device comprising such a MEMS, and use of such a portable device for detecting a liquid volume. Microelectromechanical systems (MEMS) relate to a technology of very small devices. Piezoelectricity relates at one hand to accumulation of electric charge in certain solid materials in response to an applied mechanical stress.
    Type: Application
    Filed: September 9, 2016
    Publication date: February 16, 2017
    Inventors: Jan Jacob Koning, Reinout Woltjer
  • Patent number: 8686617
    Abstract: The invention relates to a device for compensating influence of temperature on a resonator circuit. The device comprises a resonator circuit and a supply unit for supplying an electric bias signal to the resonator circuit, wherein the supply unit is adapted for adjusting the electric bias signal for compensating influence of temperature on the resonator circuit.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: April 1, 2014
    Assignee: NXP, B.V.
    Inventors: Jan Jacob Koning, Di Wu, Joep Bontemps
  • Patent number: 8629731
    Abstract: A MEMS circuit comprises a MEMS device arrangement with temperature dependent output; a resistive heating circuit; and a feedback control system for controlling the resistive heating circuit to provide heating in order to maintain a MEMS device at a constant temperature. The heating is controlled in dependence on the ambient temperature, such that a MEMS device temperature is maintained at one of a plurality of temperatures in dependence on the ambient temperature. This provides power savings because the temperature to which the MEMS device is heated can be kept within a smaller margin of the ambient temperature.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: January 14, 2014
    Assignee: NXP, B.V.
    Inventors: Jan Jacob Koning, Jozef Thomas Martinus Van Beek
  • Patent number: 8580596
    Abstract: The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters. The oscillators can be used in time-keeping and frequency reference applications such as RF modules in mobile phones, devices containing blue-tooth modules and other digital and telecommunication devices.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: November 12, 2013
    Assignee: NXP, B.V.
    Inventors: Petrus H. C. Magnee, Jan Jacob Koning, Jozef T. M. Van Beek
  • Patent number: 8256298
    Abstract: A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10?6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: September 4, 2012
    Assignee: NXP B.V.
    Inventors: Matthijs Suijlen, Jan Jacob Koning, Herman Coenraad Willem Beijerinck
  • Publication number: 20120187507
    Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.
    Type: Application
    Filed: April 7, 2010
    Publication date: July 26, 2012
    Applicant: NXP B.V.
    Inventors: Joep J.M. Bontemps, Jan Jacob Koning, Casper van der Avoort, Jozef Thomas Martinus van Beek
  • Publication number: 20120032555
    Abstract: The invention relates to a device for compensating influence of temperature on a resonator circuit. The device comprises a resonator circuit and a supply unit for supplying an electric bias signal to the resonator circuit, wherein the supply unit is adapted for adjusting the electric bias signal for compensating influence of temperature on the resonator circuit.
    Type: Application
    Filed: December 21, 2009
    Publication date: February 9, 2012
    Applicant: NXP B.V.
    Inventors: Jan Jacob Koning, Di Wu, Joep Bontemps
  • Publication number: 20110215877
    Abstract: A MEMS circuit comprises a MEMS device arrangement with temperature dependent output; a resistive heating circuit; and a feedback control system for controlling the resistive heating circuit to provide heating in order to maintain a MEMS device at a constant temperature. The heating is controlled in dependence on the ambient temperature, such that a MEMS device temperature is maintained at one of a plurality of temperatures in dependence on the ambient temperature. This provides power savings because the temperature to which the MEMS device is heated can be kept within a smaller margin of the ambient temperature.
    Type: Application
    Filed: November 10, 2009
    Publication date: September 8, 2011
    Applicant: NXP B.V.
    Inventors: Jan Jacob Koning, Jozef Thomas Martinus Van Beek
  • Publication number: 20110107838
    Abstract: A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10?6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.
    Type: Application
    Filed: October 7, 2010
    Publication date: May 12, 2011
    Applicant: NXP B.V.
    Inventors: Matthijs SUIJLEN, Jan Jacob KONING, Herman Coenraad Willem BEIJERINCK
  • Publication number: 20100258882
    Abstract: The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters.
    Type: Application
    Filed: April 10, 2009
    Publication date: October 14, 2010
    Applicant: NXP, B.V.
    Inventors: PETRUS H. C. MAGNEE, JAN JACOB KONING, JOZEF T. M. VAN BEEK
  • Publication number: 20090045460
    Abstract: A PMOS device comprises a semiconductor-on-insulator (SOI) substrate having a layer of insulating material over which is provided an active layer of n-type semiconductor material. P-type source and drain regions are provided by diffusion in the n-type active layer. A p-type plug is provided at the source region, which extends through the active semiconductor layer to the insulating layer. The plug is provided so as to enable the source voltage applied to the device to be lifted significantly above the substrate voltage without the occurrence of excessive leakage currents.
    Type: Application
    Filed: October 13, 2005
    Publication date: February 19, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Jan Jacob Koning, Jan-Harm Nieland, Johannes Hendrik Hermanus Alexius Egbers, Maarten Jacobus Swanenberg, Alfred Grakist, Adrianus Willem Ludikhuize