Patents by Inventor Jan Jacob Koning
Jan Jacob Koning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11064924Abstract: A wearable ultrasound device for signalling changes in human or animal body, and use of such a wearable device for signalling over a prolonged period of time. In an example the changes occur in a bladder. Such is especially relevant for elderly persons, women after delivery of a baby, lesion patients, demented people, children, and others, have a difficulty to control functioning of the bladder, and to be at the toilet on time to urinate.Type: GrantFiled: May 30, 2017Date of Patent: July 20, 2021Assignee: NovioScan B.V.Inventors: Reinout Woltjer, Huibert Alexander Tjabbes, Renatus Eligius Van de Vosse, Jan Jacob Koning, Paulus Gerardus Van Leuteren, Pieter Dik, Albert Harald Westra, Leonard Jan Van Schelven
-
Patent number: 9800223Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.Type: GrantFiled: April 7, 2010Date of Patent: October 24, 2017Assignee: NXP B.V.Inventors: Joep J. M. Bontemps, Jan Jacob Koning, Casper van der Avoort, Jozef Thomas Martinus van Beek
-
Publication number: 20170258386Abstract: A wearable ultrasound device for signalling changes in human or animal body, and use of such a wearable device for signalling over a prolonged period of time. In an example the changes occur in a bladder. Such is especially relevant for elderly persons, women after delivery of a baby, lesion patients, demented people, children, and others, have a difficulty to control functioning of the bladder, and to be at the toilet on time to urinate.Type: ApplicationFiled: May 30, 2017Publication date: September 14, 2017Inventors: Reinout Woltjer, Huibert Alexander Tjabbes, Renatus Eligius Van de Vosse, Jan Jacob Koning, Paulus Gerardus Van Leuteren, Pieter Dik, Albert Harald Westra, Leonard Jan Van Schelven
-
Publication number: 20170042507Abstract: An improved high voltage MEMS, and a portable ultrasound device comprising such a MEMS, and use of such a portable device for detecting a liquid volume. Microelectromechanical systems (MEMS) relate to a technology of very small devices. Piezoelectricity relates at one hand to accumulation of electric charge in certain solid materials in response to an applied mechanical stress.Type: ApplicationFiled: September 9, 2016Publication date: February 16, 2017Inventors: Jan Jacob Koning, Reinout Woltjer
-
Patent number: 8686617Abstract: The invention relates to a device for compensating influence of temperature on a resonator circuit. The device comprises a resonator circuit and a supply unit for supplying an electric bias signal to the resonator circuit, wherein the supply unit is adapted for adjusting the electric bias signal for compensating influence of temperature on the resonator circuit.Type: GrantFiled: December 21, 2009Date of Patent: April 1, 2014Assignee: NXP, B.V.Inventors: Jan Jacob Koning, Di Wu, Joep Bontemps
-
Patent number: 8629731Abstract: A MEMS circuit comprises a MEMS device arrangement with temperature dependent output; a resistive heating circuit; and a feedback control system for controlling the resistive heating circuit to provide heating in order to maintain a MEMS device at a constant temperature. The heating is controlled in dependence on the ambient temperature, such that a MEMS device temperature is maintained at one of a plurality of temperatures in dependence on the ambient temperature. This provides power savings because the temperature to which the MEMS device is heated can be kept within a smaller margin of the ambient temperature.Type: GrantFiled: November 10, 2009Date of Patent: January 14, 2014Assignee: NXP, B.V.Inventors: Jan Jacob Koning, Jozef Thomas Martinus Van Beek
-
Patent number: 8580596Abstract: The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters. The oscillators can be used in time-keeping and frequency reference applications such as RF modules in mobile phones, devices containing blue-tooth modules and other digital and telecommunication devices.Type: GrantFiled: April 10, 2009Date of Patent: November 12, 2013Assignee: NXP, B.V.Inventors: Petrus H. C. Magnee, Jan Jacob Koning, Jozef T. M. Van Beek
-
Patent number: 8256298Abstract: A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10?6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.Type: GrantFiled: October 7, 2010Date of Patent: September 4, 2012Assignee: NXP B.V.Inventors: Matthijs Suijlen, Jan Jacob Koning, Herman Coenraad Willem Beijerinck
-
Publication number: 20120187507Abstract: A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is less than 150 ppm for a variation in edge position of the resonator shape edges of 50 nm. This design combines at least two different layout features in such a way that small edge position variations (resulting from uncontrollable process variation) have negligible effect on the resonant frequency.Type: ApplicationFiled: April 7, 2010Publication date: July 26, 2012Applicant: NXP B.V.Inventors: Joep J.M. Bontemps, Jan Jacob Koning, Casper van der Avoort, Jozef Thomas Martinus van Beek
-
Publication number: 20120032555Abstract: The invention relates to a device for compensating influence of temperature on a resonator circuit. The device comprises a resonator circuit and a supply unit for supplying an electric bias signal to the resonator circuit, wherein the supply unit is adapted for adjusting the electric bias signal for compensating influence of temperature on the resonator circuit.Type: ApplicationFiled: December 21, 2009Publication date: February 9, 2012Applicant: NXP B.V.Inventors: Jan Jacob Koning, Di Wu, Joep Bontemps
-
Publication number: 20110215877Abstract: A MEMS circuit comprises a MEMS device arrangement with temperature dependent output; a resistive heating circuit; and a feedback control system for controlling the resistive heating circuit to provide heating in order to maintain a MEMS device at a constant temperature. The heating is controlled in dependence on the ambient temperature, such that a MEMS device temperature is maintained at one of a plurality of temperatures in dependence on the ambient temperature. This provides power savings because the temperature to which the MEMS device is heated can be kept within a smaller margin of the ambient temperature.Type: ApplicationFiled: November 10, 2009Publication date: September 8, 2011Applicant: NXP B.V.Inventors: Jan Jacob Koning, Jozef Thomas Martinus Van Beek
-
Publication number: 20110107838Abstract: A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10?6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.Type: ApplicationFiled: October 7, 2010Publication date: May 12, 2011Applicant: NXP B.V.Inventors: Matthijs SUIJLEN, Jan Jacob KONING, Herman Coenraad Willem BEIJERINCK
-
Publication number: 20100258882Abstract: The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters.Type: ApplicationFiled: April 10, 2009Publication date: October 14, 2010Applicant: NXP, B.V.Inventors: PETRUS H. C. MAGNEE, JAN JACOB KONING, JOZEF T. M. VAN BEEK
-
Publication number: 20090045460Abstract: A PMOS device comprises a semiconductor-on-insulator (SOI) substrate having a layer of insulating material over which is provided an active layer of n-type semiconductor material. P-type source and drain regions are provided by diffusion in the n-type active layer. A p-type plug is provided at the source region, which extends through the active semiconductor layer to the insulating layer. The plug is provided so as to enable the source voltage applied to the device to be lifted significantly above the substrate voltage without the occurrence of excessive leakage currents.Type: ApplicationFiled: October 13, 2005Publication date: February 19, 2009Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Jan Jacob Koning, Jan-Harm Nieland, Johannes Hendrik Hermanus Alexius Egbers, Maarten Jacobus Swanenberg, Alfred Grakist, Adrianus Willem Ludikhuize