Abstract: Aspects of the present disclosure provide a magnetoresistive track for use in a magnetic multi-turn sensor, the magnetoresistive track comprising one or more looped sections. The looped sections can include a crossing where the magnetoresistive track crosses itself at substantially 90 degrees. In some cases, the looped portions may be further provided with syphon structures to prevent domain walls propagating around the magnetoresistive track as an external magnetic field rotates from becoming stuck at the crossing or propagating in the wrong direction at the crossing.

Abstract: The disclosed technology generally relates to lithographically defined conductive lines for integrated circuit devices formed by plating, and more particularly to conductive lines shaped to reduce the magnitude of electric field in the electric field distributions around conductive lines of integrated and monolithic transformers and isolators.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface and a plurality of pairs of conductive layers over the horizontal main surface. Different ones of the pairs are separated by different vertical distances such that each pair serves as an arcing electrode pair and different ones of the arcing electrode pairs are configured to arc discharge at different voltages.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrically connected to first and second voltage nodes, respectively. The first conductive layer includes a plurality of arcing tips configured to form arcing electrode pairs with the second conductive layer to form an arc discharge in response to an EOS voltage between the first and second voltage nodes. The spark gap device further includes a series ballast resistor electrically connected between the arcing tips and the first voltage node, where the ballast resistor in formed in a metallization layer over the substrate and a resistance of the series ballast resistor is substantially higher than a resistance of the second conductive layer.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap array includes a sheet resistor and an array of arcing electrode pairs formed over a substrate. The array of arcing electrode pairs includes first arcing electrodes formed on the sheet resistor and a second arcing electrode arranged as a sheet formed over the first arcing electrodes and separated from the first arcing electrodes by an arcing gap. The first arcing electrodes and second arcing electrode are electrically connected to first and second voltage nodes, respectively, and the arcing electrode pairs are configured to generate arc discharges in response to an EOS voltage signal received between the first and second voltage nodes.

Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface, a first conductive layer and a second conductive layer each extending over the substrate and substantially parallel to the horizontal main surface while being separated in a vertical direction crossing the horizontal main surface. One of the first and second conductive layers is electrically connected to a first voltage node and the other of the first and second conductive layers is electrically connected to a second voltage node. The first and second conductive layers serve as one or more arcing electrode pairs and have overlapping portions configured to generate one or more arc discharges extending generally in the vertical direction in response to an EOS voltage signal received between the first and second voltage nodes.

Abstract: A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape anisotropy without exhibiting an AMR effect. To achieve this, at least a portion of the free layer comprises a plurality of layers of at least two different materials, specifically, a plurality of layers of at least a first material that is ferromagnetic and a plurality of layers of at least a second material that is known not to exhibit an AMR effect and that does not interfere with the GMR effect of the layers of ferromagnetic material.

Abstract: The present disclosure provides a magnetic multi-turn sensor that makes use of a divider type structure. In this respect, a magnetoresistive track is laid out in a loop comprising a plurality of divider portions along at least one side of the loop, the divider portions each being formed as a loop or an arch of magnetoresistive material. Adjacent divider portions are connected by a connecting loop of magnetic material. The legs of the connecting loop are formed over the top of the legs of the divider portions, to thereby form connecting legs with dead ends. In some examples, in the region of the connecting legs, a spacer is also provided between the magnetoresistive track and the magnetic connecting loop. In further arrangements described herein, a siphon structure is provided before the Y-junction of adjacent divider portions.

Abstract: Apparatus and methods provide sensing of quadrants, angles, or distance using magnetoresistive elements. A quadrant or angle sensor can have magnetoresistive elements split into multiple angles to generate an output with reduced harmonics. A distance sensor can have magnetoresistive elements split and spaced apart to generate an output with reduced harmonics. A biasing conductor can alternatingly carry different amounts of current (different in at least one of magnitude or direction) for DC offset compensation or cancellation.

Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: The present disclosure provides a magnetoresistive (xMR) sensor that has enhanced immunity to the presence of a magnetic cross field by using a combination of differential biasing on the sensing layers of the sensing elements, sensing elements having different sensitivities, and different reference magnetization directions. The xMR sensor comprises two or more arrays of sensing elements, wherein each array comprises a plurality of sensing elements. The sensing elements within each array may be arranged in pairs, wherein the sensor elements within each pair have sensing layers that are magnetically biased in antiparallel directions. The sensing elements within each array are also provided with different respective sensitivities. The sensing elements having the lowest sensitivity are provided with a reference layer magnetised in a first direction, and the sensing elements in the remaining arrays are provided with a reference layer magnetised in a direction that is antiparallel to the first direction.

Abstract: The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: The present disclosure provides tunnel magnetoresistive (TMR) multi-turn (MT) sensors with improved sensor read-out and methods of manufacturing said sensors. In some examples, the TMR sensing elements of the MT sensor are each provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. In further examples, one or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars are configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.

Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: Aspects of this disclosure relate to particles that can move in response to a magnetic field. A system can include a container, particles within the container, and a magnetic structure integrated with the container. The magnetic structure can magnetically interact with both an external magnetic field and the particles. Related methods are disclosed including magnetic field detection methods based on detection of particles within a container.

Abstract: A magnetic sensor package comprising a magnetic multi-turn sensor die and a magnetic single turn sensor die, in which both sensor dies are packaged on the same lead frame. A method of manufacturing the magnetic sensor package is also provided. A magnetic sensor system comprising a rotating magnet and the magnetic sensor package, where the sensor package is arranged so that both sensor dies sit within a homogenous magnetic field, thereby ensuring that the output signal of each sensor is not corrupted by any stray fields.

Abstract: Aspects of this disclosure relate to force based on a profile of magnetically sensitive material in a container. One or more sensors can detect the profile of the magnetically sensitive material, where the profile is associated with a force applied to the container. The profile includes magnetically sensitive material concentrated in one or more particular areas within the container. Related systems and methods for force detection are disclosed.

Abstract: Aspects of this disclosure relate to force based on movement of magnetically sensitive material. In embodiments, first magnetically sensitive material and second magnetically sensitive material can be in an initial position. According to such embodiments, one or more sensors to detect force based on relative position of the first magnetically sensitive material and the second magnetically sensitive in a second position. Related systems and methods for force detection are disclosed.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.