Abstract: A communication system (1) comprising a first and a second underwater wearable device to be worn by a swimmer at mutually distant locations is disclosed herein. The communication system is configured to derive information pertaining to the swimmer from properties of a version of the acoustic signal transmitted from a first communication module of the first underwater wearable device to a second communication module of the second underwater wearable device.

Abstract: An X-ray imaging device with an X-ray conversion area on a flexible circuit such as a Thin Film Transistor circuit with an array of detector cells is manufactured in a method comprising the steps of — providing a flexible carrier layer on a substrate plate, with a first surface of the flexible carrier layer attached to the substrate plate and a second surface of the flexible carrier layer exposed, whereby the substrate plate hinders the flexible carrier layer from bending; — creating an array of detector cells on a part of the second surface; — mounting a peripheral circuit on the second surface outside said part, interconnected to the array of detector cells; — attaching a further layer to the second surface, after or before mounting the peripheral circuit, the further layer comprising an X-ray conversion area at least over the array of detector cells, the further layer being attached to the flexible carrier layer beyond a first edge of the array of detector cells, and beyond the peripheral circuit, the furt

Abstract: A piezoelectric device and method of manufacturing are described. A first substrate is provided with an array of pillars comprising piezoelectric material. A second substrate is provided with a piezoelectric layer facing respective ends of the pillars. The respective ends of the pillars are pushed into the piezoelectric layer, while the piezoelectric layer is at least partially liquid. The piezoelectric layer is solidified to form an integral connection between the piezoelectric layer and the pillars. The piezoelectric layer can thus form a bridging structure between the respective ends of the pillars. The integral piezoelectric structure can be poled by high voltage. The bridging structure can act as a platform for depositing electrical contacts. The piezoelectric device can be used for generating or detecting acoustic waves, e.g. in medical imaging.

Abstract: A photodetector array (1) is provided comprising a plurality of pixels (10ij) between a supply line (4j) and a common electrode (2). Respective pixels (10ij) comprise a photon radiation sensitive element (11ij) arranged in a series connection with a switching element (20ij) characterized in that the series connection further includes a resistive element (30ij).

Abstract: A photodetector array (1) is provided comprising a plurality of pixels (10ij) between a supply line (4j) and a common electrode (2). Respective pixels (10ij) comprise a photon radiation sensitive element (11ij) arranged in a series connection with a switching element (20ij) characterized in that the series connection further includes a resistive element (30ij).

Abstract: A high voltage thin-film transistor is specified comprising a gate electrode (G11, G21) in a gate electrode layer (31), a semiconductive channel (C11,C12) in a channel layer (34) parallel to the gate electrode layer and being electrically insulated from the gate electrode by a gate dielectric layer (32). The transistor further comprises a dominant main electrode and a subordinate main electrode (M11, M12). The main electrodes each have an external portion (M11e, M12e) in a main electrode layer (36) and an internal portion (M11e, M12e) that protrudes through a further dielectric layer (35) between the main electrode layer and the channel layer to electrically contact the semiconductive channel in a dominant main electrode contact area (M11c) and a subordinate main electrode contact area (M12c) respectively.

Abstract: A high voltage thin-film transistor is specified comprising a gate electrode (G11, G21) in a gate electrode layer (31), a semiconductive channel (C11,C12) in a channel layer (34) parallel to the gate electrode layer and being electrically insulated from the gate electrode by a gate dielectric layer (32). The transistor further comprises a dominant main electrode and a subordinate main electrode (M11, M12). The main electrodes each have an external portion (M11e, M12e) in a main electrode layer (36) and an internal portion (M11e, M12e) that protrudes through a further dielectric layer (35) between the main electrode layer and the channel layer to electrically contact the semiconductive channel in a dominant main electrode contact area (M11c) and a subordinate main electrode contact area (M12c) respectively.