Abstract: Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells.

Abstract: A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.

Abstract: A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.

Abstract: A method is described for manufacturing solar cells having a selective emitter. Wafers free of saw damage are initially provided. A doping source is then applied over the entire surface of the wafer and the dopant is initially lightly diffused into the wafer until a first layer resistance area is obtained. The applied doping source is subsequently structured, only those areas which essentially correspond to the sections on the wafer to be subsequently contacted remaining as a result of the structuring.

Abstract: A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p+-emitter regions and the n++-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.