Abstract: The invention relates to a semiconductor laser device including a first semiconductor laser, which is designed to emit a first radiation with a first wavelength of maximum intensity along a first main emission direction during operation of the semiconductor laser device, a second semiconductor laser, which is designed to emit a second radiation with a second wavelength of maximum intensity, greater than the first wavelength of maximum intensity, along a second main emission direction during operation of the semiconductor laser device, a prismatic element having a base, a radiation entry face and a radiation exit face wherein the radiation entry face and the radiation exit face are opposite side faces of the prismatic element running obliquely to each other, wherein the first radiation and the second radiation impinge on the radiation entry face of the prismatic element, and wherein the first main emission direction and the second main emission direction are arranged relative to a normal of the radiation entry

Abstract: The invention relates to a semiconductor laser device having a plurality of semiconductor lasers, wherein the semiconductor device has a mounting support with a mounting surface; the semiconductor lasers are located on the mounting surface; the semiconductor device has at least two driver components for controlling the semiconductor lasers; and the at least two driver components are arranged one on top of the other seen in a vertical direction that extends perpendicularly to the mounting surface.

Abstract: The invention relates to a semiconductor laser device including at least one semiconductor laser which is secured to a mounting surface of a mounting support via an intermediate support, wherein the intermediate support has a securing surface, to which the at least one semiconductor laser is secured; the intermediate support has a mounting lateral surface which runs perpendicularly to the securing surface and at which the intermediate support (2) is secured to the mounting surface of the mounting support; and the intermediate support has at least two electric contact surfaces, said at least two electric contact surfaces being connected to a respective connection surface of the mounting support in an electrically conductive manner and running parallel to the mounting surface of the mounting support.

Abstract: A laser bar chip includes at least a first laser diode, a second laser diode and a third laser diode. The first laser diode, the second laser diode and the third laser diode each include a waveguide structure. The laser bar chip includes a first cathode contact which is electrically connected to the first laser diode, and a second cathode contact which is electrically connected to the second laser diode and the third laser diode. The laser bar chip also includes a first anode contact which is electrically connected to the first laser diode and to the second laser diode.

Abstract: The invention relates to an optoelectronic component, having a support and at least two lasers which are arranged on the support, wherein the surface area of a common beam outlet window of the optoelectronic component for the electromagnetic laser beam, which is generated during operation, of the at least two lasers equals at most 500×100 ?m2 for an uncollimated electromagnetic laser beam or at most 1500×300 ?m2 for a collimated electromagnetic laser beam.

Abstract: The invention relates to a method for determining a laser light offset in a laser package having a carrier substrate, at least one laser device arranged on the carrier substrate for emitting laser light surrounded by a housing cover, the housing cover having a light exit window through which a laser beam is emitted from the laser package during the intended use of the laser package.

Abstract: The invention relates to a laser package comprising a laser device configured to emit laser radiation through at least one laser facet on a front side surface of the laser device; an electrically conductive heat sink; and a contact layer between the laser device and the electrically conductive heat sink comprising a nanowire structure formed of an electrically conductive material. The contact layer comprises at least one first region and at least one second region, and the at least one first region has a higher material density of the electrically conductive material than the at least one second region. In addition, the at least one first region is arranged adjacent to the at least one laser facet.

Abstract: In an embodiment a method includes providing a connecting element having a first main surface, applying a first frame-shaped metallization to or over a carrier and applying a first frame-shaped solder reservoir over the first main surface of the connecting element or applying the first frame-shaped metallization over the first main surface of the connecting element and applying the first frame-shaped solder reservoir over or to the carrier, wherein a width of the first frame-shaped solder reservoir is smaller than a width of the first frame-shaped metallization and liquefying a solder of the first frame-shaped solder reservoir so that a first frame-shaped solder layer is formed which mechanically connects the carrier and the connecting element to one another, the first frame-shaped solder layer having a seam which is formed during liquefying the solder of the first frame-shaped solder reservoir and surrounds the first frame-shaped solder layer.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

Abstract: A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

Abstract: A semiconductor laser device is specified comprising an edge emitting semiconductor laser diode, which emits laser light along a horizontal direction during operation, a reflector element, which deflects a first part of the laser light in a vertical direction, while a second part of the laser light continues to propagate in the horizontal direction, and a detector element, which is arranged at least partly in a beam path of the second part of the laser light. An optoelectronic beam deflection element for a semiconductor laser device is furthermore specified.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

Abstract: A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode.

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.