Patents by Inventor Jan Nedbal

Jan Nedbal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8324089
    Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: December 4, 2012
    Assignee: Honeywell International Inc.
    Inventors: Roger Yu-Kwan Leung, Wenya Fan, Jan Nedbal
  • Publication number: 20110021012
    Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.
    Type: Application
    Filed: July 20, 2010
    Publication date: January 27, 2011
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Roger Yu-Kwan Leung, Wenya Fan, Jan Nedbal, Lea M. Dankers
  • Publication number: 20080291634
    Abstract: Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component.
    Type: Application
    Filed: May 21, 2008
    Publication date: November 27, 2008
    Inventors: Martin W. Weiser, Kikue S. Burnham, De-Ling Zhou, Roger Y. Leung, Jan Nedbal, Ravi Rastogi
  • Publication number: 20070099005
    Abstract: The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices, in particular for flat panel displays. A substantially crack-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, colloidal silica, an optional catalyst, and optional water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free silicon polymer film, having a thickness of from about 700 ? to about 20,000 ?, and a transparency to light in the range of about 400 nm to about 800 nm of about 90% or more.
    Type: Application
    Filed: October 31, 2005
    Publication date: May 3, 2007
    Inventors: Roger Leung, Jan Nedbal, Jinghong Chen, Amanuel Gebrebrhan, Beth Munoz
  • Patent number: 7011889
    Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: March 14, 2006
    Assignee: Honeywell International Inc.
    Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
  • Patent number: 6962727
    Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.
    Type: Grant
    Filed: June 3, 2002
    Date of Patent: November 8, 2005
    Assignee: Honeywell International Inc.
    Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
  • Publication number: 20030105264
    Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.
    Type: Application
    Filed: February 19, 2002
    Publication date: June 5, 2003
    Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
  • Publication number: 20030031789
    Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I.
    Type: Application
    Filed: June 3, 2002
    Publication date: February 13, 2003
    Inventors: William B. Bedwell, Nigel P. Hacker, Roger Y. Leung, Nancy Iwamoto, Jan Nedbal, Songyuan Xie, Lorenza Moro, Shyama P. Mukherjee
  • Patent number: 6287477
    Abstract: Methods for removing unwanted siloxane and silsesquioxane dielectric film precursor residues from substrates and spin on coating devices are provided. The methods of the invention use liquid silicones to dissolve the film precursors. Solutions of the film precursors in the silicones do not undergo gelling or increase in molecular weight.
    Type: Grant
    Filed: October 18, 1999
    Date of Patent: September 11, 2001
    Assignee: Honeywell International Inc.
    Inventors: Nigel P. Hacker, Jan Nedbal