Patents by Inventor Jan-Olov Svederg

Jan-Olov Svederg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Grid-UMOSFET with electric field shielding of gate oxide
    Patent number: 8946726
    Abstract: A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: February 3, 2015
    Assignee: Cree, Inc.
    Inventors: Christopher Harris, Andrei Konstantinov, Jan-Olov Svederg
  • Grid-UMOSFET with electric field shielding of gate oxide
    Patent number: 8421148
    Abstract: A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
    Type: Grant
    Filed: September 14, 2007
    Date of Patent: April 16, 2013
    Assignee: Cree, Inc.
    Inventors: Christopher Harris, Andrei Konstantinov, Jan-Olov Svederg
  • Short gate high power MOSFET and method of manufacture
    Patent number: 8084813
    Abstract: A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: December 27, 2011
    Assignee: Cree, Inc.
    Inventors: Andrei Konstantinov, Christopher Harris, Jan-Olov Svederg
  • JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS
    Publication number: 20090224354
    Abstract: A junction barrier Schottky diode is provided as having submicron channel width between implant regions by way of a process including the use of spacer technology. On-state resistance is lowered by providing the implant regions in a channel layer having increased dopant concentration.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 10, 2009
    Applicant: CREE, INC.
    Inventors: Andrei Konstantinov, Christopher Harris, Jan-Olov Svederg
  • SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE
    Publication number: 20090140326
    Abstract: A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.
    Type: Application
    Filed: December 3, 2007
    Publication date: June 4, 2009
    Applicant: Cree, Inc.
    Inventors: Andrei Konstantinov, Christopher Harris, Jan-Olov Svederg
  • GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
    Publication number: 20090072241
    Abstract: A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
    Type: Application
    Filed: September 14, 2007
    Publication date: March 19, 2009
    Applicant: CREE, INC.
    Inventors: Christopher Harris, Andrei Konstantinov, Jan-Olov Svederg