Abstract: A photonic integrated circuit chip includes a substrate and a wafer on the substrate. The wafer itself includes a photonic grating coupler with a taper portion and grating features. The grating features extend from the taper portion toward the substrate.

Abstract: A system for passive alignment of fibers to an interface of a photonic integrated circuit (PIC) includes an input frame, an actuator, and an output frame. The actuator arranged to apply force along a force axis to the input frame. The output frame including a tip for picking up a plate and transferring the force thereto, the output frame being connected to the input frame such that the output frame may tilt relative to the input frame and the output frame is elastically biased relative to the input frame into a position wherein the tip is aligned on the force axis.

Abstract: A photonic integrated circuit chip includes a substrate and a wafer on the substrate. The wafer itself includes a photonic grating coupler with a taper portion and grating features. The grating features extend from the taper portion toward the substrate.

Abstract: A system for passive alignment of fibers to an interface of a photonic integrated circuit (PIC) includes an input frame, an actuator, and an output frame. The actuator arranged to apply force along a force axis to the input frame. The output frame including a tip for picking up a plate and transferring the force thereto, the output frame being connected to the input frame such that the output frame may tilt relative to the input frame and the output frame is elastically biased relative to the input frame into a position wherein the tip is aligned on the force axis.

Abstract: A system for passive alignment of fibers to an interface of a photonic integrated circuit (PIC) includes an input frame, an actuator, and an output frame. The actuator arranged to apply force along a force axis to the input frame. The output frame including a tip for picking up a plate and transferring the force thereto, the output frame being connected to the input frame such that the output frame may tilt relative to the input frame and the output frame is elastically biased relative to the input frame into a position wherein the tip is aligned on the force axis.

Abstract: A photonic integrated circuit chip includes a substrate and a wafer on the substrate. The wafer itself includes a photonic grating coupler with a taper portion and grating features. The grating features extend from the taper portion toward the substrate.

Abstract: A crossed nanobeam structure for strain engineering in semiconductor devices is provided. For example, such a structure can be used for a low-threshold germanium laser. While the photonic crystal nanobeam enables light confinement in a subwavelength volume with small optical loss, another crossing nanobeam induces high tensile strain in the small region where the optical mode is tightly confined. As maintaining a small optical loss and a high tensile strain reduces the required pumping for achieving net optical gain beyond cavity losses, this technique can be used to develop an extremely low-threshold Ge laser source. Moreover, the structure can be easily integrated into electronic and photonic circuits.

Abstract: A crossed nanobeam structure for strain engineering in semiconductor devices is provided. For example, such a structure can be used for a low-threshold germanium laser. While the photonic crystal nanobeam enables light confinement in a subwavelength volume with small optical loss, another crossing nanobeam induces high tensile strain in the small region where the optical mode is tightly confined. As maintaining a small optical loss and a high tensile strain reduces the required pumping for achieving net optical gain beyond cavity losses, this technique can be used to develop an extremely low-threshold Ge laser source. Moreover, the structure can be easily integrated into electronic and photonic circuits.

Abstract: A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Abstract: A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.