Abstract: Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger (25,27) which drain finger is connected to a stack of one or more metal interconnect layers, (123,61,59,125) wherein a metal interconnect layer (123) of said stack is connected to a drain region (25) on the substrate, wherein said stack comprises a field plate (123, 125, 121) adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.

Abstract: Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger (25,27) which drain finger is connected to a stack of one or more metal interconnect layers, (123,61,59,125) wherein a metal interconnect layer (123) of said stack is connected to a drain region (25) on the substrate, wherein said stack comprises a field plate (123, 125, 121) adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.

Abstract: The invention relates to a connector module for a measuring system, which connector module comprises:—a number of sensor connections placed mutually adjacently in a single row;—a connecting cable having at least one plug and connected to the sensor connections; wherein the sensor connections and at least a part of the connecting cable are embedded in a flexible material. The invention further relates to a modular system for measuring and transferring sensor signals to a monitor unit, which system comprises; —a basic module for connecting to the monitor unit; and at least one amplifier module for amplifying the sensor signals; wherein the modules are electrically connected to each other by means of a bus system.