Abstract: A method and a plant for the production of material boards from at least one material which is spread to form a press mat and mixed with at least one binder curable by heat and/or pressure. The press mat is compressed in a double belt press with steel belts warmer than the press mat, and is heated by heat conduction. At least one cover layer resting against a steel belt is heated to a temperature above the curing temperature of the binder and cured at least partially. The uncured parts of the press mat are heated and cured in a downstream injection press by introducing tempered fluids to a temperature above the curing temperature of the binder. Fluids are introduced into or through the press mat through one or both cover layers. Also provided are a material board produced by a method and/or in such a plant.

Abstract: A hydromount for mounting a motor vehicle unit is disclosed. The hydromount includes a supporting spring supporting a mount core and surrounding a working chamber, and a compensation chamber separated from the working chamber by a dividing wall and delimited by a compensation diaphragm. In embodiments, the compensation chamber and the working chamber are filled with a liquid and are connected by a damping duct incorporated into the dividing wall. In an embodiment, the dividing wall has two dividing plates between which a diaphragm is accommodated in a manner capable of oscillating. In an embodiment, the diaphragm and the dividing wall delimit an air chamber connected to the environment via an opening in the dividing wall, and the opening can be unblocked and closed by a switchable non-return device having a pressure-actuatable non-return valve with an opening pressure set to or having an oscillation amplitude of the diaphragm.

Abstract: A hydraulically damping mount for mounting a motor vehicle unit, such as mounting a motor vehicle engine on a motor vehicle body, includes a supporting spring and a compensation chamber. The supporting spring is configured to support a mount core and surround a working chamber. The compensation chamber is separated from the working chamber by a dividing wall and delimited by a compensation diaphragm. In embodiments, the compensation chamber and the working chamber are filled with a fluid and are connected to each other by a damping duct incorporated into the dividing wall. In embodiments, the dividing wall includes a diaphragm that is capable of oscillating, and a foam element associated with the diaphragm supports the diaphragm in the event of a deflection.

Abstract: A hydraulically damping mount for mounting a motor vehicle unit, such as mounting a motor vehicle engine on a motor vehicle body, includes a supporting spring and a compensation chamber. The supporting spring is configured to support a mount core and surround a working chamber. The compensation chamber is separated from the working chamber by a dividing wall and delimited by a compensation diaphragm. In embodiments, the compensation chamber and the working chamber are filled with a fluid and are connected to each other by a damping duct incorporated into the dividing wall. In embodiments, the dividing wall includes a diaphragm that is capable of oscillating, and a foam element associated with the diaphragm supports the diaphragm in the event of a deflection.

Abstract: A mounting device, in particular to the mounting of an internal combustion engine on a chassis of a motor vehicle, which is provided with a fluid working chamber that is fluidically connected via at least one fluid channel to a fluid equalization chamber via at least one fluid channel in a housing. At the same time, a fluid damping chamber is provided, which is separated by an elastic membrane from the fluid working chamber and which is connected with fluidic connection via a throttling channel to an outer environment of the mounting device. The throttling channel is formed by a replaceable throttling element separately from the housing.

Abstract: A hydromount for mounting a motor vehicle unit is disclosed. The hydromount includes a supporting spring supporting a mount core and surrounding a working chamber, and a compensation chamber separated from the working chamber by a dividing wall and delimited by a compensation diaphragm. In embodiments, the compensation chamber and the working chamber are filled with a liquid and are connected by a damping duct incorporated into the dividing wall. In an embodiment, the dividing wall has two dividing plates between which a diaphragm is accommodated in a manner capable of oscillating. In an embodiment, the diaphragm and the dividing wall delimit an air chamber connected to the environment via an opening in the dividing wall, and the opening can be unblocked and closed by a switchable non-return device having a pressure-actuatable non-return valve with an opening pressure set to or having an oscillation amplitude of the diaphragm.

Abstract: A mounting device, in particular to the mounting of an internal combustion engine on a chassis of a motor vehicle, which is provided with a fluid working chamber that is fluidically connected via at least one fluid channel to a fluid equalization chamber via at least one fluid channel in a housing. At the same time, a fluid damping chamber is provided, which is separated by an elastic membrane from the fluid working chamber and which is connected with fluidic connection via a throttling channel to an outer environment of the mounting device. The throttling channel is formed by a replaceable throttling element separately from the housing.

Abstract: A semiconductor device includes a plurality of memory cells, a temperature budget sensor, and a circuit. The circuit periodically compares a signal from the temperature budget sensor to a reference signal and refreshes the memory cells based on the comparison.

Abstract: A semiconductor device includes a preprocessed wafer and an annealed phase change material layer contacting the preprocessed wafer. The semiconductor device includes a first material layer contacting the annealed phase change material layer.

Abstract: A memory cell includes a first electrode, a second electrode, a layer of phase change material positioned between the first and second electrodes, and a stress layer contacting the layer of phase change material. The phase change material includes a high temperature state, and the stress layer defines an interface with the phase change material and operates to suppress a transition in the phase change material to the high temperature state.

Abstract: A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change material, and a second transistor coupled to the volume of phase change material for accessing a second storage location within the volume of phase change material.

Abstract: A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.

Abstract: A memory cell includes a first electrode and a second electrode. The second electrode has a first layer and a second layer. The first layer has a lower etch rate relative to the second layer. The memory cell includes a phase-change material positioned between the first electrode and the second electrode.

Abstract: A memory cell includes a first electrode, a second electrode, a layer of phase change material extending from a first contact with the first electrode to a second contact with the second electrode, and a sidewall spacer contacting the second electrode and a sidewall of the layer of phase change material adjacent to the second contact.

Abstract: A memory includes an array of resistive memory cells, bit lines between rows of the memory cells for accessing the memory cells, and a conductive plate coupled to each of the memory cells.

Abstract: A memory cell includes a first electrode, a second electrode, phase-change material contacting the first electrode and the second electrode, multilayer thermal insulation contacting the phase-change material, and dielectric material contacting the multilayer thermal insulation.

Abstract: A memory cell includes a first electrode, a second electrode, and a first portion of phase-change material contacting the first electrode. The memory cell includes a second portion of phase-change material contacting the second electrode and a third portion of phase-change material between the first portion and the second portion. A phase-change material composition of the third portion and the second portion gradually transitions from the third portion to the second portion.

Abstract: A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The memory cell includes first insulation material having a first thermal conductivity and contacting the phase-change material. A maximum thickness of the first insulation material contacts the narrow region. The memory cell includes a second insulation material having a second thermal conductivity greater than the first thermal conductivity and contacting the first insulation material.

Abstract: A memory includes an array of memory cells, each memory cell including resistive material, a first insulation material laterally surrounding the resistive material of each memory cell, and a heat spreader between the memory cells to thermally isolate each memory cell.

Abstract: A memory device including a memory cell, a first circuit, and a second circuit. The memory cell includes phase-change material. The first circuit is configured to provide pulses to the phase-change material and to program each of more than two states into the memory cell. The second circuit is configured to sense the present state of the memory cell and provide signals that indicate the present state of the memory cell. The first circuit programs each of the more than two states into the memory cell based on the signals.