Abstract: In a method of skin tone optimization in a color gamut mapping system, an image signal is first transformed from a predetermined color domain to an HSV color domain for generating an HSV image signal. Next, a skin tone optimization is performed on the HSV image signal for generating an adjusted saturation gain. Then, a color enhancement is performed on the HSV image signal according to the adjusted saturation gain and a color shift signal so as to generate a color enhancement signal. Finally, the color enhancement signal is transformed from the HSV color domain to the predetermined color domain.

Abstract: In a method of skin tone optimization in a color gamut mapping system, an image signal is first transformed from a predetermined color domain to an HSV color domain for generating an HSV image signal. Next, a skin tone optimization is performed on the HSV image signal for generating an adjusted saturation gain. Then, a color enhancement is performed on the HSV image signal according to the adjusted saturation gain and a color shift signal so as to generate a color enhancement signal. Finally, the color enhancement signal is transformed from the HSV color domain to the predetermined color domain.

Abstract: The present invention discloses an OLED driving device, including a first switch transistor, a first transistor, a second switch transistor, a storage capacitor and a second transistor. The first switch transistor is used to receive a data signal, and output the data signal by the control of a first scan signal. The first transistor is used to compensate the effect of the threshold voltage of the second transistor. The second switch transistor is used to receive a voltage signal, and output the voltage signal by the control of a second scan signal. The storage capacitor is used to store a data voltage. The second transistor is electrically connected to the second switch transistor through the storage capacitor. The present invention can efficiently release the charges from the storage capacitor, enhance display effect, and change the input voltage level for adapting different operating voltages of integrate circuits.

Abstract: An organic memory at least includes a number of select lines, a number of data lines, a bit cell array, and a number of digital sensing circuits. The bit cell array includes a number of bit cells, wherein each bit cell includes an organic memory cell and a switch element. Each digital sensing circuit includes a current-to-voltage converter and a sensing block circuit. Therefore, a complete digital sensing mechanism of an organic memory IC is formed and is practicable and suitable for mass-production.

Abstract: A shift register, a driving circuit and a display device using the same are disclosed. The shift register includes a 1st and a 2nd rectifying elements and 1st˜4th transistors. 1st source/drains of the 1st˜3rd transistors receive a common voltage respectively. The gates of the 1st and 3rd transistors and a 2nd source/drain of the 2nd transistor are coupled to a 2nd terminal of the 2nd rectifying element. The gates of the 2nd and 4th transistors and a 2nd source/drain of the 1st transistor are coupled to a 2nd terminal of the 1st rectifying element. A 1st source/drain of the 4th transistor is coupled to a 2nd source/drain of the 3rd transistor. The 1st terminals of the 1st and 2nd rectifying elements respectively receive input signals and a 1st clock signal. A 2nd source/drain of the 4th transistor receives a 2nd clock signal.

Abstract: The Low-Temperature Poly-Silicon thin film transistor display device of the invention arrayed with a plurality of gate lines and data lines and a switch unit and a pixel unit are located in the intersection of scan line and the data line. The device comprises a gate driven unit a data driven unit and a control unit wherein the gate driven unit provides a plurality of gate voltages to the gate lines to drive the switch unit, the data driven unit sends the corresponding video data to the gate lines, and the control unit controls the transmitting sequence of the video data to the data lines. The method of the invention includes the steps of: gate driven unit providing every N scanning signals to the scan lines and then the data driven unit switching the transmitting sequence of the video data.

Abstract: A memory device is provided. The device comprises a sense amplifier having a cell input terminal and a reference input terminal, a first sub-array coupled to the cell input terminal through a first switch and coupled to the reference input terminal through a second switch, a second sub-array coupled to the cell input terminal through a third switch and coupled to the reference input terminal through a fourth switch, and a reference cell array coupled between the second switch and the fourth switch and coupled to the reference input terminal.

Abstract: A shift register, a driving circuit and a display device using the same are disclosed. The shift register includes a 1st and a 2nd rectifying elements and 1st˜4th transistors. 1st source/drains of the 1st˜3rd transistors receive a common voltage respectively. The gates of the 1st and 3rd transistors and a 2nd source/drain of the 2nd transistor are coupled to a 2nd terminal of the 2nd rectifying element. The gates of the 2nd and 4th transistors and a 2nd source/drain of the 1st transistor are coupled to a 2nd terminal of the 1st rectifying element. A 1st source/drain of the 4th transistor is coupled to a 2nd source/drain of the 3rd transistor. The 1st terminals of the 1st and 2nd rectifying elements respectively receive input signals and a 1st clock signal. A 2nd source/drain of the 4th transistor receives a 2nd clock signal.

Abstract: The present invention discloses an OLED driving device, including a first switch transistor, a first transistor, a second switch transistor, a storage capacitor and a second transistor. The first switch transistor is used to receive a data signal, and output the data signal by the control of a first scan signal. The first transistor is used to compensate the effect of the threshold voltage of the second transistor. The second switch transistor is used to receive a voltage signal, and output the voltage signal by the control of a second scan signal. The storage capacitor is used to store a data voltage. The second transistor is electrically connected to the second switch transistor through the storage capacitor. The present invention can efficiently release the charges from the storage capacitor, enhance display effect, and change the input voltage level for adapting different operating voltages of integrate circuits.

Abstract: A shift-register circuit. The shift-register circuit has a plurality of shift-register units connected in series. Each of the shift-register units generates first and second pulse signals, wherein the first pulse signal is an output signal of the shift-register circuit and the second pulse signal is a trigger signal of a subsequent shift-register unit. A LCD panel driving circuit using the shift-register circuit is also disclosed.

Abstract: Scan driver and driving system with low input voltage and their level shift circuit are disclosed. The scan driver includes a latch unit, a level shift circuit and a buffer. The latch unit generates a first control signal and a second control signal. The level shift circuit is connected to the latch unit to receive the first control signal, the second control signal, a first clock signal and a second clock signal, so as to output a scan signal with high voltage level. The buffer enhances driving ability of the scan signal for driving thin-film transistors (TFTs) of a display panel.

Abstract: An organic memory is provided. The organic memory at least comprises a plurality of select lines, a plurality of data lines, a bit cell array, and a plurality of digital sensing circuits. The bit cell array comprises a plurality of bit cells, wherein each bit cell comprises an organic memory cell and a switch element. Each digital sensing circuit comprises a current-to-voltage converter and a sensing block circuit. Therefore, the present invention provides a complete digital sensing mechanism of an organic memory IC, which is practicable and suitable for mass-production.

Abstract: A digital sensing circuit capable of sensing bit information stored in a bit cell of an organic memory is provided. The digital sensing circuit includes a current-to-voltage converter, a reset block circuit, and a sensing block circuit. The current-to-voltage converter converts a conduction current into a voltage signal. The sensing block circuit buffers and outputs the bit information according to the voltage signal. Therefore, the challenge of design and layout of the present invention is very low so that the yield rate will be improved. Hence, a practical memory device suitable for mass-production is achieved.

Abstract: A bit cell of an organic memory is provided. The bit cell of the organic memory comprises an organic memory cell, a first transistor, a current mirror and a second transistor. To connect the organic memory cell to a data line, the first transistor is activated for reading and the second transistor is activated for writing. Furthermore, the first transistor has a greater size than the second transistor. Therefore, a fast processing time in writing and a large conduction current in reading are catered for. In addition, the current mirror amplifies the conduction current in reading and increases the capacity for resisting the interference by adjacent bit cell.

Abstract: A digital sensing circuit capable of sensing bit information stored in a bit cell of an organic memory is provided. The digital sensing circuit comprises a current-to-voltage converter, a reset block circuit, and a sensing block circuit. The current-to-voltage converter converts a conduction current into a voltage signal. The sensing block circuit buffers and outputs the bit information according to the voltage signal. Therefore, the challenge of design and layout of the present invention is very low so that the yield rate will be improved. Hence, a practical memory device suitable for mass-production is achieved.

Abstract: A bit cell of an organic memory is provided. The bit cell of the organic memory comprises an organic memory cell, a first transistor, a current mirror and a second transistor. To connect the organic memory cell to a data line, the first transistor is activated for reading and the second transistor is activated for writing. Furthermore, the first transistor has a greater size than the second transistor. Therefore, a fast processing time in writing and a large conduction current in reading are catered for. In addition, the current mirror amplifies the conduction current in reading and increases the capacity for resisting the interference by adjacent bit cell.

Abstract: A memory device is provided. The device comprises a sense amplifier having a cell input terminal and a reference input terminal, a first sub-array coupled to the cell input terminal through a first switch and coupled to the reference input terminal through a second switch, a second sub-array coupled to the cell input terminal through a third switch and coupled to the reference input terminal through a fourth switch, and a reference cell array coupled between the second switch and the fourth switch and coupled to the reference input terminal.

Abstract: A memory array including a plurality of programmable memory cells, a plurality of column lines and a plurality of row lines is introduced. Each of the programmable memory cells is coupled to corresponding one of the column lines and corresponding one of the row lines. Each of the programmable memory cells includes an organic memory cell and an active switching element. The active switching element is controlled by the column line and interposed between the row line and the organic memory cell. Under controlling of the column line, the active switching element is turned on to coupling the row line and the organic memory cell to connect to each other.

Abstract: A thin-film transistor (TFT) is described to have a gate layer, an insulating layer, a semiconductor layer, and a source/drain layer formed on a flexible substrate. The source and the drain layers are separated by a channel with a special shape. This does not only increase the aspect ratio of the channel per unit area, the source and the drain also have multiple directions for transmitting carriers. The carrier mobility of the TFT is thus enhanced with uniform and stable circuit properties.

Abstract: The present invention relates a time-sharing multiplexing driving method and framework for image signals. By means of a plurality of wiring paths, the turned-on orders of the signal switches of the pixel units in a liquid crystal panel (LCD) are sequentially controlled so that the pixel units of two adjacent phases in the panel can have the same turned-on order. This not only can avoid the situation where the switch control signal serial connecting path in the panel is so long that the control signal of the end switch will be seriously distorted for the excessively great load, but also make the variation amounts of the adjacent pixel data voltages the same. Therefore, the objective of the invention can be achieved. Namely, no joint space is generated during the image signal time-sharing multiplexing driving.