Abstract: A process for producing products by contacting particles that are stirred in a fixed bed with a gas phase. Where the particles are treated in a process zone of a gas-traversed reactor where the process zone is the region in a reactor in which the stirred particle bed is brought into contact with the gas phase. The particles are circulated in the process zone by use of a close-clearance stirrer during the contacting with the gas phase and the stirrer mechanism is close-clearance when in equation 1 W ? ( h ) = u R ( h ) u B ( h ) .

Abstract: Silicon-containing composite particles, the process comprising the steps of: (a) providing a plurality of porous particles comprising micropores and/or mesopores, wherein the D50 particle diameter of the porous particles from 0.5 to 200 ?m; the total pore volume of micropores and mesopores is from 0.4 to 2.2 cm3/g; and the PD50 pore diameter is no more than 30 nm; c (b) combining a charge of the porous particles with a charge of a silicon-containing precursor in a batch pressure reactor, wherein the charge of porous particles has a volume of at least 20 cm3 per litre of reactor volume (cm3/LRV), and wherein the charge of the silicon-containing precursor comprises at least 2 g of silicon per litre of reactor volume (g/LRV); and (c) heating the reactor to a temperature effective to cause deposition of silicon in the pores of the porous particles, thereby providing the silicon-containing composite particles.

Abstract: A process for producing silicon-containing materials. Where the silicon-containing materials are produced by thermal decomposition of silicon precursors in the presence of porous particles and silicon is deposited within pores and on a surface of the porous particles. The thermal decomposition of the silicon precursors takes place in the reaction zone of a gas-traversed reactor and the particles are circulated in the reaction zone during the thermal decomposition by using a stirrer which is close-clearance in the heated regions and the stirring mechanism is in close-clearance in accordance with equation 1 W ? ( h ) = u R ( h ) u B ( h ) .

Abstract: Silicon-containing composite particles, the process comprising the steps of: (a) providing a plurality of porous particles comprising micropores and/or mesopores, wherein the D50 particle diameter of the porous particles from 0.5 to 200 ?m; the total pore volume of micropores and mesopores is from 0.4 to 2.2 cm3/g; and the PD50 pore diameter is no more than 30 nm; c (b) combining a charge of the porous particles with a charge of a silicon-containing precursor in a batch pressure reactor, wherein the charge of porous particles has a volume of at least 20 cm3 per litre of reactor volume (cm3/LRV), and wherein the charge of the silicon-containing precursor comprises at least 2 g of silicon per litre of reactor volume (g/LRV); and (c) heating the reactor to a temperature effective to cause deposition of silicon in the pores of the porous particles, thereby providing the silicon-containing composite particles.

Abstract: A process for preparing trimethylchlorosilane (M3) and methyltrichlorosilane (M1) by disproportionation of dimethyldichlorosilane (M2) in the presence of an Al2O3 catalyst is described herein. The dimethyldichlorosilane used is in the form of a silane mixture that includes 80-100% by weight of dimethyldichlorosilane (M2). The difference in content from 100% by weight includes M1 and M3.

Abstract: A process for dehydrogenating and methylating silanes. The process includes providing methyl chloride that is reacted with a silane selected from the group consisting of SiH4, H2SiMe2, H2SiMeCl, H3SiMe, H3SiCl and HSiMe2Cl, in the presence of at least one ammonium and/or phosphonium salt at a temperature in the range of 70-350° C.

Abstract: A process for producing silicon-containing materials. Where the silicon-containing materials are produced by thermal decomposition of silicon precursors in the presence of porous particles and silicon is deposited within pores and on a surface of the porous particles. The thermal decomposition of the silicon precursors takes place in the reaction zone of a gas-traversed reactor and the particles are circulated in the reaction zone during the thermal decomposition by using a stirrer which is close-clearance in the heated regions and the stirring mechanism is in close-clearance in accordance with equation 1 W ? ( h ) = u R ( h ) u B ( h ) .

Abstract: Silicon-containing materials along with process for producing the same. Where the silicon-containing materials are produced by thermal decomposition of one or more silicon precursors in the presence of one or more porous particles. Where an amount of silicon is deposited within pores and on a surface of the one or more porous particles while in a cascade reactor system which includes a plurality of reactors.

Abstract: Dichlorosilane and trichlorosilane are dehydrogenated at elevated temperature in the presence of an ammonium or phosphonium salt as a catalyst, and a halogenated hydrocarbon or hydrogen halide. The method may be used to synthesize organochlorosilane.

Abstract: The Applicants respectfully request that the abstract of the instant application be removed in its entirety and replaced with the following wording. A process for producing a silicon composite. Where the process includes thermal decomposition of at least one silicon precursor in the presence of an amount of porous particles.

Abstract: A process for reacting silicone with hydrothermal water is at temperatures from 140° C. or supercritical water. A solids mixture containing silicon is formed.

Abstract: Silicon-containing composite particles, the process comprising the steps of: (a) providing a plurality of porous particles comprising micropores and/or mesopores, wherein the D50 particle diameter of the porous particles from 0.5 to 200 ?m; the total pore volume of micropores and mesopores is from 0.4 to 2.2 cm3/g; and the PD50 pore diameter is no more than 30 nm; c (b) combining a charge of the porous particles with a charge of a silicon-containing precursor in a batch pressure reactor, wherein the charge of porous particles has a volume of at least 20 cm3 per litre of reactor volume (cm3/LRV), and wherein the charge of the silicon-containing precursor comprises at least 2 g of silicon per litre of reactor volume (g/LRV); and (c) heating the reactor to a temperature effective to cause deposition of silicon in the pores of the porous particles, thereby providing the silicon-containing composite particles.

Abstract: Silicon carbon composite particles and anode materials for use within lithium-ion batteries utilizing the silicon carbon composite particles. Where the silicon carbon composite particles have an alkali metal or alkaline earth metal concentration of 0.05 to 10 wt% and a pH > 7.5.

Abstract: A silirane-functionalized compound, a process for preparing the same, and a process for preparing siloxanes using a silirane-functionalized compound are described herein.

Abstract: A process for dehydrogenating and methylating silanes. The process includes providing methyl chloride that is reacted with a silane selected from the group consisting of SiH4, H2SiMe2, H2SiMeCl, H3SiMe, H3SiCl and HSiMe2Cl, in the presence of at least one ammonium and/or phosphonium salt at a temperature in the range of 70-350° C.

Abstract: A process for preparing trimethylchlorosilane (M3) and methyltrichlorosilane (M1) by disproportionation of dimethyldichlorosilane (M2) in the presence of an Al2O3 catalyst is described herein. The dimethyldichlorosilane used is in the form of a silane mixture that includes 80-100% by weight of dimethyldichlorosilane (M2). The difference in content from 100% by weight includes M1 and M3.

Abstract: Dichlorosilane and trichlorosilane are dehydrogenated at elevated temperature in the presence of an ammonium or phosphonium salt as a catalyst, and a halogenated hydrocarbon or hydrogen halide. The method may be used to synthesize organochlorosilane.

Abstract: The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120° C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula Si6R12, by reacting [X]2[Si6Cl14] with AlR3 in at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(H2SiCl)]+.

Abstract: The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120° C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula Si6R12, by reacting [X]2[Si6Cl14] with AlR3 in at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(H2SiCl)]+.

Abstract: The present invention relates to a process for the preparation of linear, cyclic and/or cage-type perhalogenated oligosilyl and polysilyl anions by reacting perhalogenated monosilanes, oligosilanes or polysilanes with organosubstituted ammonium and/or phosphonium halides at temperatures ranging from ?80° C. to 85° C., preferably ?80° C. to 60° C., and to oligosilyl and polysilyl anions prepared according to that process.