Abstract: A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlybInxbGa1-xb-ybN type and a potential well layer of a AlywInxwGa1-xw-ywN type for radiant recombinations of electrons and holes, where xb?xw and yb?yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlyInxGa1-x-yN.