Abstract: The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1?x?yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.

Abstract: The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1-x-yN general formula where 0?x?1, 0?y?1 and 0?x+y?1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes.