Abstract: The embodiments disclose a patterned composite magnetic layer structure configured to use magnetic materials having differing temperature and magnetization characteristics in a recording device, wherein the patterned composite magnetic layer structure includes magnetic layers, at least one first magnetic material configured to be used in a particular order to reduce a recording temperature and configured to control and regulate coupling and decoupling of the magnetic layers and at least one second magnetic material with differing temperature characteristics is configured to control recording and erasing of data.

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

Abstract: A data storage media may have at least a multi-layer recording lamination with a predetermined coercivity. The multi-layer recording lamination can be configured to record at least one servo format mark for a plurality of data tracks with a solid immersion mirror and program a data bit on the multi-layer recording lamination with a near field transducer.

Abstract: The embodiments disclose a patterned composite magnetic layer structure configured to use magnetic materials having differing temperature and magnetization characteristics in a recording device, wherein the patterned composite magnetic layer structure includes magnetic layers, at least one first magnetic material configured to be used in a particular order to reduce a recording temperature and configured to control and regulate coupling and decoupling of the magnetic layers and at least one second magnetic material with differing temperature characteristics is configured to control recording and erasing of data.

Abstract: The embodiments disclose at least one predetermined patterned layer configured to eliminate a physical path of lateral thermal bloom in a recording device, at least one gradient layer coupled to the patterned layer and configured to use materials with predetermined thermal conductivity for controlling a rate of dissipation and a path coupled to the gradient layer and configured to create a path of least thermal conduction resistance for directing dissipation along the path, wherein the path substantially regulates and prevents lateral thermal bloom.

Abstract: The embodiments disclose a plasmonic cladding structure including at least one conformal plasmonic cladding structure wrapped around plural stack features of a recording device, wherein the conformal plasmonic cladding structure is configured to create a near-field transducer in close proximity to a recording head of the recording device, at least one conformal plasmonic cladding structure with substantially removed top surfaces of the stack features with exposed magnetic layer materials and a thermally insulating filler configured to be located between the stack features.

Abstract: The embodiments disclose a stack feature of a stack configured to confine optical fields within and to a patterned plasmonic underlayer in the stack configured to guide light from a light source to regulate optical coupling.

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

Abstract: Various magnetic stack embodiments may be constructed with a soft magnetic underlayer (SUL) having a first thickness disposed between a substrate and a magnetic recording layer. A heatsink may have a second thickness and be disposed between the SUL and the magnetic recording layer. The first and second thicknesses may each be tuned to provide predetermined thermal conductivity and magnetic permeability throughout the data media.

Abstract: A magnetic stack includes a substrate and a magnetic recording layer disposed over the substrate. The magnetic recording layer comprises magnetic crystalline grains and a segregant disposed between grain boundaries of the crystalline grains. One or both of the magnetic crystalline grains and the segregant are doped with a rare earth or transition metal dopant in an amount that provides the magnetic recording layer with a magnetic damping value, ?, between about 0.1 to about 1.

Abstract: A data media may generally be configured in accordance with various embodiments with contactingly adjacent first and second heatsink layers that are tuned with a common crystallographic orientation and with different thermal conductivities to provide a predetermined thermal gradient. The data media may further be configured with a recording layer formed with the common crystallographic orientation adjacent the first and second heatsink layers.

Abstract: A layer configured for use in a magnetic stack has electrical resistivity greater than about 5×10?8 ?m and thermal conductivity greater than about 1 W/mK. In some arrangements, the magnetic stack includes a substrate with the layer disposed over the substrate, a magnetic recording layer disposed over the layer, and a thermal resist layer disposed between the layer and the magnetic recording layer. In some arrangements, the layer is configured to function as a heat sink and a soft under layer. A system that incorporates the layer can include a magnetic write pole, a near field transducer (NFT) positioned proximate the write pole that radiates energy.

Abstract: Various magnetic slack embodiments may be constructed with a soft magnetic underlayer (SUL) having a first thickness disposed between a substrate and a magnetic recording layer. A heatsink may have a second thickness and be disposed between the SUL and the magnetic recording layer. The first and second thicknesses may each be tuned to provide predetermined thermal conductivity and magnetic permeability throughout the data media.

Abstract: A data storage media may have at least a multi-layer recording lamination with a predetermined coercivity. The multi-layer recording lamination can be configured to record at least one servo format mark for a plurality of data tracks with a solid immersion mirror and program a data bit on the multi-layer recording lamination with a near field transducer.

Abstract: A magnetic stack includes multiple granular layers, at least one of the multiple granular layers is a magnetic layer that includes exchange coupled magnetic grains separated by a segregant having Ms greater than 100 emu/cc. Each of the multiple granular layers have anisotropic thermal conductivity.

Abstract: A magnetic stack includes multiple granular layers, at least one of the multiple granular layers is a magnetic layer that includes exchange coupled magnetic grains separated by a segregant having Ms greater than 100 emu/cc. Each of the multiple granular layers have anisotropic thermal conductivity.

Abstract: A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2.

Abstract: A patterned magnetic layer is formed by bombardment of a masked high Mrt magnetic layer with a combination of both heavy ion species and light ion species. The method can be implemented as sequential process steps or in a single process step with the proper heavy/light ion species mixture. Advantageously, the combined heavy/light ion species bombardment method results in a patterned magnetic layer having high topographical uniformity across its surface.

Abstract: Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

Abstract: A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2.