Abstract: The present invention is directed to a paired electrosynthesis process for the (co)production of hydroxylamine (HA) and/or ammonia out of N2 or air and water. It further provides an electrolyzer developed for said purpose comprising both a porous cathode and anode with an effective catalyst layer and based on a continuous flow process. The process and electrolyzer of the present invention are particularly useful to efficiently convert reactants such as NOs?, NO2; NOx and N2 at both, the cathode and anode.

Abstract: The present invention relates to a method of manufacturing a dense composite polymeric-ceramic membrane, compromising the steps of casting a porous ceramic support layer comprising YSZ and TiO2 flakes, followed by thermal curing and sintering steps, coating the prepared porous ceramic support structure with a thin layer of TiO2 to vary the pore size distribution of the support structure and further densification by using ion selective polymers to reduce gas crossover while maintaining a high enough conductivity.

Abstract: The present invention is related to a system and method for the removal of carbon dioxide from an atmosphere, more particularly by removing carbon dioxide from an atmosphere using water electrolysis, which produces hydrogen. The system and method are based on improvements related to the electrolyser which is fed by a CO2-rich, post-capture (bi)carbonate solution, wherein said improvements enable isolation of a 85:15 wt. % CO2/O2 gas mixture from the anolyte during operation, with an in line CO2/O2 separation at the anode of the electrolyser.

Abstract: A separator for an electrochemical device, including: a porous carrier having two, respectively a first and a second, largest parallel sides separated by a thickness, and a hydrogel, made of a first metal oxide and an aqueous medium, present within the first of both largest sides and in at least part of the thickness.

Abstract: The present invention is related to the electrochemical conversion of CO2 and provides the use of Gas Diffusion Electrode with an aprotic solvent in such conversion of CO2 as well as an electrochemical cell for use in such conversion. The application and electrochemical cell as herein provided are particularly useful in the conversion of CO2 into oxalate/oxalic acid.

Abstract: The present invention is related to the electrochemical conversion of CO2 and provides the use of Gas Diffusion Electrode with an aprotic solvent in such conversion of CO2 as well as an electrochemical cell for use in such conversion. The application and electrochemical cell as herein provided are particularly useful in the conversion of CO2 into oxalate/oxalic acid.

Abstract: The present invention relates to a novel approach of obtaining a gas diffusion electrode (GDE), the gas diffusion electrodes obtained using said method and the use thereof in the electrocatalytic conversion of gaseous reactants into economically interesting reaction products. The GDEs obtained using the method of the present invention are particularly useful in the electrochemical of gaseous reactants such as CO2, H2, N2, or O2 into bulk chemicals and fuels such as Syngas, Formic Acid, Methanol, Ethanol, Ethane, Ethylene, Methane, Ammonia, and the like.

Abstract: The present disclosure is related to method for producing a semiconductor device comprising the steps of: providing a semiconductor substrate (1), comprising active components on the surface of said substrate, depositing a top layer (2) of dielectric material on the surface of said substrate or on other dielectric layers present on said surface, etching at least one first opening (7) at least through said top layer, filling said opening(s) at least with a first conductive material (8), and performing a first CMP step, to form said first conductive structures (3,26), etching at least one second opening (13) at least through said top layer, filling said opening(s) at least with a second conductive material (10), and performing a second CMP step, to form said second conductive structures (4,24), wherein the method comprises the step of depositing a common CMP stopping layer (5,25) on said dielectric top layer, before the steps of etching and filling said first opening(s), so that said same CMP stopping layer is

Abstract: The present disclosure is related to method for producing a semiconductor device comprising the steps of: providing a semiconductor substrate (1), comprising active components on the surface of said substrate, depositing a top layer (2) of dielectric material on the surface of said substrate or on other dielectric layers present on said surface, etching at least one first opening (7) at least through said top layer, filling said opening(s) at least with a first conductive material (8), and performing a first CMP step, to form said first conductive structures (3,26), etching at least one second opening (13) at least through said top layer, filling said opening(s) at least with a second conductive material (10), and performing a second CMP step, to form said second conductive structures (4,24), wherein the method comprises the step of depositing a common CMP stopping layer (5,25) on said dielectric top layer, before the steps of etching and filling said first opening(s), so that said same CMP stopping layer is