Patents by Inventor Jan Vanhellemont

Jan Vanhellemont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Removal of impurities from semiconductor device layers
    Patent number: 8227299
    Abstract: A method for removing impurities from at least one semiconductor device layer during manufacturing of a semiconductor device is disclosed. The semiconductor device layer has a compound semiconductor material and/or germanium. Each heating process performed during the manufacturing of the semiconductor device after provision of the semiconductor device layer has a low thermal budget determined by temperatures equal to or lower than about 900° C. and time periods equal to or lower than about 5 minutes. In one aspect, the method includes providing a germanium gettering layer with a higher solubility for the impurities than the semiconductor device layer. The germanium gettering layer is provided at least partly in direct or indirect contact with the at least one semiconductor device layer, such that impurities can diffuse from the at least one semiconductor device layer to the germanium gettering layer.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: July 24, 2012
    Assignees: IMEC, Umicore
    Inventors: Eddy Simoen, Jan Vanhellemont
  • REMOVAL OF IMPURITIES FROM SEMICONDUCTOR DEVICE LAYERS
    Publication number: 20090273010
    Abstract: A method for removing impurities from at least one semiconductor device layer during manufacturing of a semiconductor device is disclosed. The semiconductor device layer has a compound semiconductor material and/or germanium. Each heating process performed during the manufacturing of the semiconductor device after provision of the semiconductor device layer has a low thermal budget determined by temperatures equal to or lower than about 900° C. and time periods equal to or lower than about 5 minutes. In one aspect, the method includes providing a germanium gettering layer with a higher solubility for the impurities than the semiconductor device layer. The germanium gettering layer is provided at least partly in direct or indirect contact with the at least one semiconductor device layer, such that impurities can diffuse from the at least one semiconductor device layer to the germanium gettering layer.
    Type: Application
    Filed: May 1, 2009
    Publication date: November 5, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Umicore
    Inventors: Eddy Simoen, Jan Vanhellemont